2013
DOI: 10.1063/1.4809537
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Two-photon pumped lasing in a single CdS microwire

Abstract: Articles you may be interested inModified threshold of two-photon-pumped random lasing of ZnO nanorods by femtosecond laser ablation Tunable two-photon pumped lasing using a holographic polymer-dispersed liquid-crystal grating as a distributed feedback element

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Cited by 23 publications
(17 citation statements)
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“…Under a pump fluence slightly below the ASE threshold (310 µJ cm −2 ), the PL decay lifetime is ≈130 ps, much shorter than the typical excitonic recombination lifetimes (a few ns) of these CMDs (see in Figure S14, Supporting Information). The reason of the short lifetime is the generation of multiexciton . This ≈130 ps relaxation time closely matches the Auger‐limited biexciton recombination lifetimes.…”
Section: Resultssupporting
confidence: 68%
See 1 more Smart Citation
“…Under a pump fluence slightly below the ASE threshold (310 µJ cm −2 ), the PL decay lifetime is ≈130 ps, much shorter than the typical excitonic recombination lifetimes (a few ns) of these CMDs (see in Figure S14, Supporting Information). The reason of the short lifetime is the generation of multiexciton . This ≈130 ps relaxation time closely matches the Auger‐limited biexciton recombination lifetimes.…”
Section: Resultssupporting
confidence: 68%
“…Under high pump intensity, the pump intensity dependent PL peak intensity exhibits a relationship far beyond quadratic, which refers to the ASE process. Thus, the threshold of two‐photon pumped ASE (2ASE) is estimated to be 400 µJ cm −2 , which is lower than that of previously reported CsPbBr 3 /Cs 4 PbBr 6 composite microcrystals and many other inorganic semiconductors (see Table S2, Supporting Information) . In CsPbBr 3 NCs, the ASE threshold typically is limited by the surface fast charge carrier trapping and multiparticle Auger recombination .…”
Section: Resultsmentioning
confidence: 75%
“…Therefore, it could be predicted that the lasing action from perovskite microcubes should be less sensitive to the excitation direction. In addition, compared to linear absorption and emission, the nonlinearity of semiconductor materials has attracted considerable attention because of the merits of multi‐photon features, such as the deep penetration depth, high spatial resolution, and little damage to targeted samples . Recently, all‐inorganic perovskite materials have been introduced into nonlinear optical devices .…”
Section: Introductionmentioning
confidence: 99%
“…In principle, two fundamental factors are crucial to the achievement of low threshold lasers, including 1) the gain media with high quantum efficiency and 2) a high‐quality microresonator with high efficient optical feedback. As an important II–VI semiconductor with extraordinary optical gain properties, CdS has been qualified to be an excellent gain material for small‐sized lasers in highly integrated photonic applications . However, previous CdS nanowire (NW) lasers have suffered from high lasing threshold, due to the low end‐face reflection and high self‐absorption induced energy loss in NW cavity.…”
Section: Comparison Of Lasing Threshold Values and Preparation Methodmentioning
confidence: 99%