Two-photon spectroscopy study of ZnS and CdS under hydrostatic pressure

Mang, A.; Reimann, K.; Rübenacke, St.; Steube, M.

doi:10.1103/physrevb.53.16283

Cited by 31 publications

(14 citation statements)

References 49 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…If we neglect the effect of pressure on the exciton binding energy we can deduce the bangap pressure coefficients of c-CdS and h-CdS films to be, respectively, 41 and 42 meV/GPa at low temperature. These values are in fair agreement with the bandgap pressure coefficient of 45 meV/GPa in bulk and undoped h-CdS at room temperature [9,12] and with the pressure coefficient of 46.2 meV/GPa for the A-exciton in h-CdS at low temperature [11]. In addition to the PL spectra we can determine the energy of the excitons from the position of the resonance peak in the Raman intensity in Fig.…”

Section: Discussionsupporting

confidence: 81%

“…The estimated accuracy of the experimental pressure coefficient is about 1 meV/GPa. These pressure coefficients are smaller by about 10% than the pressure coefficient of 46.2 meV/GPa determined in the A exciton of bulk h-CdS at low temperature by Mang et al [11]. If the CdS films were to be "clamped" by the GaAs substrate we expect that the thin film pressure coefficient would be smaller than that of the bulk sample by about 23% from the difference in their bulk moduli.…”

Section: Experimental Details and Resultsmentioning

confidence: 91%

“…By fitting the data points to a straight line we have determined the pressure coefficient of the PL peak to Table 1 Pressure coefficients (dω/dP) in cm -1 /GPa and the normalized pressure coefficients (1/ω)(dω/dP) in GPa -1 of phonon modes in c-CdS and h-CdS films grown on GaAs substrates. [11]. If the CdS films were to be "clamped" by the GaAs substrate we expect that the thin film pressure coefficient would be smaller than that of the bulk sample by about 23% from the difference in their bulk moduli.…”

Section: Experimental Details and Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Pressure dependence of the optical and vibrational properties of hexagonal and cubic CdS films grown on GaAs

Choi

2005

Physica Status Solidi (b)

View full text Add to dashboard Cite

The pressure dependence of the excitonic photoluminescence and Raman scattering in both hexagonal and cubic CdS films grown on GaAs substrates is reported. We found that the pressure coefficients of the cubic CdS films are equal to those of the hexagonal films within experimental uncertainties. The main difference between their optical and vibrational properties seems to lie in their exciton energies, the hexagonal phase having a slightly higher energy than the cubic phase. Strong enhancement in multi-longitudinal optical (LO) phonon scattering has been observed by "pressure-tuning" the exciton energy to resonate with the excitation laser line. As a result we have been able to determine the pressure coefficients of the higher order LO phonons in CdS for modes as high as 5LO. We found that the pressure coefficients of these higher order LO modes when normalized by the phonon frequency exhibit a systematic decrease with the order of the mode.

show abstract

Section: Discussionsupporting

confidence: 81%

Section: Experimental Details and Resultsmentioning

confidence: 91%

Section: Experimental Details and Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Pressure dependence of the optical and vibrational properties of hexagonal and cubic CdS films grown on GaAs

Choi

2005

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…2.The fundamental band gap of the system is direct, Γ v 15 → Γ c 1 , in agreement with experiment15 . As expected, the HF result, 10.96 eV, strongly overestimates the actual experimental value of 3.83eV80 . The average energy position E d of the d band complex atFIG.…”

supporting

confidence: 70%

Wave-function-based approach to quasiparticle bands: Insight into the electronic structure ofc-ZnS

et al. 2011

View full text Add to dashboard Cite

Ab initio wave-function-based methods are employed for the study of quasiparticle energy bands of zinc-blende ZnS, with focus on the Zn 3d "semicore" states. The relative energies of these states with respect to the top of the S 3p valence bands appear to be poorly described as compared to experimental values not only within the local density approximation (LDA), but also when manybody corrections within the GW approximation are applied to the LDA or LDA+U mean-field solutions [T. Miyake, P. Zhang, M. L. Cohen, and S. G. Louie, Phys. Rev. B 74, 245213 (2006)].In the present study, we show that for the accurate description of the Zn 3d states a correlation treatment based on wave function methods is needed. Our study rests on a local Hamiltonian approach which rigorously describes the short-range polarization and charge redistribution effects around an extra hole or electron placed into the valence respective conduction bands of semicon- 2

show abstract

“…FIG.1:(Color online) Relative errors of the calculated (in GGA) band gaps of selected semiconductors/insulators. Experimental data have been taken from the Refs [17][18][19]…”

mentioning

confidence: 99%

Self-consistent solution of Hedin's equations: Semiconductors and insulators

Kutepov

2017

Phys. Rev. B

112

View full text Add to dashboard Cite

The band gaps of a few selected semiconductors/insulators are obtained from the self-consistent solution of the Hedin's equations. Two different schemes to include the vertex corrections are studied: (i) the vertex function of the first-order (in the screened interaction W ) is applied in both the polarizability P and the self-energy Σ, and (ii) the vertex function obtained from the BetheSalpeter equation is used in P whereas the vertex of the first-order is used in Σ. Both schemes show considerable improvement in the accuracy of the calculated band gaps as compared to the selfconsistent GW approach (scGW ) and to the self-consistent quasi-particle GW approach (QSGW ). To further distinguish between the performances of two vertex-corrected schemes one has to properly take into account the effect of the electron-phonon interaction on the calculated band gaps which appears to be of the same magnitude as the difference between schemes i) and ii).

show abstract

Two-photon spectroscopy study of ZnS and CdS under hydrostatic pressure

Cited by 31 publications

References 49 publications

Pressure dependence of the optical and vibrational properties of hexagonal and cubic CdS films grown on GaAs

Pressure dependence of the optical and vibrational properties of hexagonal and cubic CdS films grown on GaAs

Wave-function-based approach to quasiparticle bands: Insight into the electronic structure ofc-ZnS

Self-consistent solution of Hedin's equations: Semiconductors and insulators

Contact Info

Product

Resources

About