Two possible causes of the stage of emission buildup after excitation by a nanosecond electron flux pulse

Лисицын, В. М.; Лисицына, Л. А.; Karipbayev, Zhakyp; Valiev, Damir; Степанов, С. А.

doi:10.1016/j.optmat.2015.01.022

Cited by 6 publications

(1 citation statement)

References 14 publications

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“…At the same time, understanding the processes of interaction of ionizing radiation on semiconductor devices, as well as microelectronic devices, is very important for the design and development of electronic devices, and therefore, much attention has been paid to this area in recent years [ 8 , 9 , 10 ]. Note that while the processes of radiation damage are fairly well understood in binary oxides and halides [ 11 , 12 , 13 , 14 , 15 , 16 , 17 ], the situation in multicomponent glasses is still far from detailed [ 18 , 19 , 20 ].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Efficiency of Shielding Gamma and Electron Radiation Using Glasses Based on TeO2-WO3-Bi2O3-MoO3-SiO to Protect Electronic Circuits from the Negative Effects of Ionizing Radiation

et al. 2022

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This article considers the effect of MoO3 and SiO additives in telluride glasses on the shielding characteristics and protection of electronic microcircuits operating under conditions of increased radiation background or cosmic radiation. MoO3 and SiO dopants were chosen because their properties, including their insulating characteristics, make it possible to avoid breakdown processes caused by radiation damage. The relevance of the study consists in the proposed method of using protective glasses to protect the most important components of electronic circuits from the negative effects of ionizing radiation, which can cause failures or lead to destabilization of the electronics. Evaluation of the shielding efficiency of gamma and electron radiation was carried out using a standard method for determining the change in the threshold voltage (∆U) value of microcircuits placed behind the shield and subjected to irradiation with various doses. It was established that an increase in the content of MoO3 and SiO in the glass structure led to an increase of up to 90% in the gamma radiation shielding efficiency, while maintaining the stability of microcircuit performance under prolonged exposure to ionizing radiation. The results obtained allow us to conclude that the use of protective glasses based on TeO2–WO3–Bi2O3–MoO3–SiO is highly promising for creating local protection for the main components of microcircuits and semiconductor devices operating under conditions of increased background radiation or cosmic radiation.

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