Two-stage filamentary mechanism in high-performance organic resistive switches

Bisht, Arti; Saini, Nitish; Bhardwaj, Komal; Kumar, Rachana; Kumar, Ajeet

doi:10.1039/d3tc02348f

J. Mater. Chem. C

2023

DOI: 10.1039/d3tc02348f

|View full text |Cite

Two-stage filamentary mechanism in high-performance organic resistive switches

Arti Bisht,

Nitish Saini,

Komal Bhardwaj

et al.

Abstract: The PDI RS device performs excellently in basic characteristics such as low operating voltages, great endurance, and a two-year shelf life. The quantized conductance steps of the device demonstrate its potential for multilevel memory applications.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 70 publications

(103 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

Effect of terminal substituent of iso‐indigo‐based materials on the intermolecular stacking and memory performance

Hu,

Zhang,

Qin

et al. 2024

Chemistry An Asian Journal

View full text Add to dashboard Cite

Attributed to the characteristics of narrow band gap structural units and full spectral response, iso‐indigo is often used as an electron acceptor in organic electronic materials. Organic molecules with large conjugated surfaces and strong intermolecular forces can form ordered stacked structures through self‐assembly. In this paper, the self‐assembly performances of IDCF3 and IDCN are regulated by changing the end groups. The effects of terminal groups on the resistive memory behaviours and reproducibility are investigated. The properties of IDCF3 and IDCN devices are characterized by UV‐VIS spectroscopy, cyclic voltammetry and DSC diffraction. The results show that when the end groups with different steric hindrance are introduced into the ends of the molecules with good backbone plane, the conjugated surfaces of the molecules will bend due to the different steric hindrance of the end groups in the form of cambium and layer‐ordered packing, which will affect the threshold voltage and device reproducibility.

show abstract

Effect of terminal substituent of iso‐indigo‐based materials on the intermolecular stacking and memory performance

Hu,

Zhang,

Qin

et al. 2024

Chemistry An Asian Journal

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Two-stage filamentary mechanism in high-performance organic resistive switches

Abstract: The PDI RS device performs excellently in basic characteristics such as low operating voltages, great endurance, and a two-year shelf life. The quantized conductance steps of the device demonstrate its potential for multilevel memory applications.

Cited by 1 publication

References 70 publications

Effect of terminal substituent of iso‐indigo‐based materials on the intermolecular stacking and memory performance

Effect of terminal substituent of iso‐indigo‐based materials on the intermolecular stacking and memory performance

Contact Info

Product

Resources

About