Two-stage GaN HEMT based class-C pulsed amplifier for S-band radar applications

Kashif, A.; Azam, Sher; Mughal, Farooq; Cheema, N.; Imran, Muhammad

doi:10.1109/ibcast.2015.7058556

Cited by 4 publications

(1 citation statement)

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“…For an amplifier in c1ass-B (Fig. 1), it is typical to select the quiescent point (Q-point) near pinch-off voltage [5]. Q-point is selected just below the pinch-off at V GS = -2.85 V (I DS = 81.4 mA) and the drain voltage is 28 V. Importantly, during the power up and initial adjustment testing, the Q-point is set according to the drain current, because the real U GS can be slightly different from the simulation, because the simulation rely on a transistor model and not on a load-pull measurement.…”

Section: Pa Designmentioning

confidence: 99%

Optimizing Bias Point of High Efficiency Class-B GaN Power Amplifier for the Best Efficiency

Fišer

Götthans

2019

2019 29th International Conference Radioelektronika (RADIOELEKTRONIKA)

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High performance amplifiers are always a demanding component in the world of wireless communication. The amplifier is the heart that drives each radio system. We have designed and developed a high performance one-stage class-B GaN power amplifier for drone applications in the S-band (at 1,6 GHz) with maximum output power 6 W. This paper compare fixed settings of the bias point option and optimized bias point for the best efficiency within the entire output power range. Applying the proposed method, that is particularly advantageous for low power performance to improve efficiency by more than 15 %.

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Section: Pa Designmentioning

confidence: 99%