Two-Stage High-Gain High-Power Distributed Amplifier Using Dual-Gate GaN HEMTs

Santhakumar, R.; Thibeault, B.J.; Higashiwaki, Masataka; Keller, S.; Chen, Zhe; Mishra, Umesh K.; York, R.A.

doi:10.1109/tmtt.2011.2144996

Cited by 38 publications

(14 citation statements)

References 17 publications

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“…[1][2][3] The advantages of GaN-based HEMTs include high breakdown voltage, high current density, and high output power. It is mainly attributed to the wide band-gap (∼3.4 eV), high breakdown field (∼5 MV/cm), high electron mobility (∼1200 cm 2 / V-s) and high electron saturation velocity (∼2.5×10 7 cm/s) 4,5 of GaN.…”

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confidence: 99%

Temperature-Dependent Investigation of AlGaN/GaN Oxide-Passivated HEMT by Using Hydrogen Peroxide Oxidation Method

Liu

Chou

Hsu

et al. 2012

ECS J. Solid State Sci. Technol.

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This work investigates temperature-dependent device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) grown by a metal-organic chemical vapor deposition (MOCVD) system, and passivated by using hydrogen peroxide (H 2 O 2 ) oxidation method. The present oxide-passivated AlGaN/GaN HEMT can effectively improve device performances, including current drive, transconductance, gate-drain forward turn-on voltage (V on ), and gate-drain reverse breakdown voltage (BV GD ) at 300-480 K. In addition, improved RF and power performances have also been achieved as compared with an unpassivated device. The present oxide-passivated AlGaN/GaN HEMT is promising for high-temperature and high-power monolithic microwave integrated circuit (MMIC) applications.

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confidence: 99%

Temperature-Dependent Investigation of AlGaN/GaN Oxide-Passivated HEMT by Using Hydrogen Peroxide Oxidation Method

Liu

Chou

Hsu

et al. 2012

ECS J. Solid State Sci. Technol.

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“…The DA adopts tapered width of the drain line sections to improve output power and also uses the input capacitive coupling technique to reduce input parasitic capacitance of the transistors. The amplifier achieves 10 dB small-signal gain, 9-15 W saturated In [23], a two-stage distributed power amplifier is designed using a 0.2-µm dual-gate GaN HEMT technology (Fig. 26).…”

Section: E Gan Dasmentioning

confidence: 99%

“…The two-stage distributed power amplifier implemented using a 0.2-µm dual-gate GaN HEMT technology[23].…”

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confidence: 99%

The (R)evolution of Distributed Amplifiers: From Vacuum Tubes to Modern CMOS and GaN ICs

2018

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I. INTRODUCTION B ROADBAND amplification of signals is desirable in many applications such as high-speed data communications, high-resolution imaging systems, optoelectronics and instrumentation systems. Wide bandwidth is one of the prominent factors to be considered in designing such a system since it determines ability of the system for transferring highdata-rate information, transmitting/receiving short pulses, or processing wideband signals. Designing broadband amplifiers has always been challenging. The ever-increasing demand for higher data-rates and low energy consumption in next generation communication systems further complicates the design of broadband amplifiers. Distributed amplifiers (DA), also known as travelling-wave amplifiers (TWA), are one of the most popular broadband amplifier architectures. The DA architecture was originally patented by Percival in 1936 [1] and later elaborated by Ginzton in 1948 [2]. The early DAs were implemented using vacuum tube technology. One of the first vacuum tube DAs fabricated in 1950 is shown in Fig. 1. The amplifier included three type 807 tubes and 482-Ω plate and grid lines. The amplifier achieved a gain of 11 dB, bandwidth of 100 Hz to 300 MHz, and a typical output power of 15 W [3]. The first Monolithic Microwave Integrated Circuit (MMIC) DA was demonstrated by Ayasli in 1982 [4] using a Gallium Arsenide (GaAs) MESFET technology. The amplifier, shown in Fig. 2, included four transistors with 1-µm gate length and 50-Ω input and output lines. It achieved 9-dB gain and 1-13 GHz bandwidth. GaAs remained the main technology for design of DAs until the inception of the first Indium Phosphide (InP) DA in 1990 [5] with an impressive bandwidth of 5-100 GHz. GaAs and InP semiconductor technologies have been predominantly employed in implementation of DAs. These technologies provide superior performance resulting from their high electron mobility, high saturated electron velocity, high breakdown voltage, and high-resistivity substrate. The later contributes to availability of low-loss integrated passive elements. The market demands for low cost, small size, and low power consumption of electronic systems has motivated researchers to develop techniques to implement distributed amplifiers using mainstream CMOS technologies. The first integrated CMOS DA was presented by Kleveland in 1999 [6]. Recently,

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“…Advancements in wireless communication technology have prompted the demand for multi-octave broadband amplifiers for application in high data rate transmission, ultrawideband (UWB) systems, high-resolution radars, and instrumentations where a broadband LNA is a crucial component [1,2,3,4]. For designing UWB amplifiers, Darlington configurations [5,6,7], feedback techniques [8,9,10,11,12,13], inductive-peaking techniques [14,15,16,17], and distributed amplifiers (DAs) [18,19,20,21,22,23,24] are the most popular approaches. Researchers in [5] reported broadband feedback Darlington amplifiers with bandwidth enhancement.…”

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confidence: 99%

A five-octave broadband LNA MMIC using bandwidth enhancement and noise reduction technique

Yang

Rong

et al. 2019

IEICE Electron. Express

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This letter presents the design and fabrication of a five-octave broadband low noise amplifier (LNA) using 0.1-µm GaAs pseudomorphic high-electron mobility transistor (pHEMT) technology. The multi-peaking bandwidth enhancement and noise reduction technique is proposed for a cascode topology to significantly improve the performance of the LNA. The fabricated LNA achieves a −3 dB bandwidth of 1-32 GHz with an average gain of 12.2 dB, an excellent noise figure (NF) of 1.9-2.6 dB, and an output-referred 1 dB compression point (OP 1dB) of 10.2-12.7 dBm with good input/output matching over the entire bandwidth. To the best of the authors' knowledge, these results demonstrate the lowest room-temperature NF ever reported for fully integrated MMIC amplifiers with a bandwidth of 1 to more than 30 GHz.

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Two-Stage High-Gain High-Power Distributed Amplifier Using Dual-Gate GaN HEMTs

Cited by 38 publications

References 17 publications

Temperature-Dependent Investigation of AlGaN/GaN Oxide-Passivated HEMT by Using Hydrogen Peroxide Oxidation Method

Temperature-Dependent Investigation of AlGaN/GaN Oxide-Passivated HEMT by Using Hydrogen Peroxide Oxidation Method

The (R)evolution of Distributed Amplifiers: From Vacuum Tubes to Modern CMOS and GaN ICs

A five-octave broadband LNA MMIC using bandwidth enhancement and noise reduction technique

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