Two-stage ultrawide-band 5-W power amplifier using SiC MESFET

Sayed, Ahmed; Boeck, Georg

doi:10.1109/tmtt.2005.850404

Cited by 47 publications

(26 citation statements)

References 20 publications

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“…However power levels have been typically below 3W and the efficiencies reported are typically less than 25%. At higher power levels, hybrid resistive feedback amplifiers with packaged transistors have been reported for up to 3.4 GHz and 5W power level [11,12].…”

Section: Broadband Pa Topologymentioning

confidence: 99%

RLC Matched GaN HEMT Power Amplifier with 2 GHz Bandwidth

Krishnamurthy¹,

Wang²,

Landberg³

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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We have demonstrated a RLC matched GaN HEMT power amplifier with 12dB gain, 0.05-2.0 GHz bandwidth, 8W CW output power and 36.7-65.4% drain efficiency over the band. The amplifier is packaged in a ceramic SO8 package and contains a GaN on SiC device operating at 28V drain voltage, alongside GaAs integrated passive matching circuitry. A second circuit designed for 48V operation and 15W CW power over the same band, obtains over 20W under pulsed condition with 10% duty cycle and 100μs pulse width. CW measurements are pending after assembly in an alternate high power package. These amplifiers are suitable for use in wideband digital cellular infrastructure, handheld radios, and jamming applications.

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Section: Broadband Pa Topologymentioning

confidence: 99%

RLC Matched GaN HEMT Power Amplifier with 2 GHz Bandwidth

Krishnamurthy¹,

Wang²,

Landberg³

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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“…IMPEDANCE MATCHING TECHNIQUE Once the compromised values of source and load impedances over the full bandwidth are fixed, input and output matching networks have to be designed fulfilling these broadband requirements. Multi-section matching networks as described in [6] have been realized for this reason using Rogers RO4003 substrate material with permittivity r of 3.38 and dielectric thickness of 0.51 mm. As an extension to [6] the bias Tees have been improved towards a transmission loss of less than 0.5 dB between 500 kHz and 3.5 GHz.…”

Section: Imd Optmentioning

confidence: 99%

“…The transistor is driven at V GS = 1.9 V (I DS = 450 mA) and V DS = 28 V through a broadband biasing structure that covers the desired bandwidth. A feedback resistance (R F ) as described in [5,6] with a value of 250 is used to increase operating bandwidth and improve amplifier stability. Further improvement in stability at low frequencies can be achieved by inserting an R-C parallel combination (R S //C S ) at the input.…”

Section: Introductionmentioning

confidence: 99%

5W highly linear GaN power amplifier with 3.4 GHz bandwidth

Sayed¹,

Boeck²

2007

2007 European Microwave Conference

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In this paper, a 1 MHz to 3.4 GHz, 5 W, highly linear power amplifier based on GaN HEMT is reported. Load-pull technique has been applied to introduce a compromising solution for the PA performance trade-off problem. Over the whole bandwidth a measured small signal gain of 14 ± 0.7 dB and an output return loss of better than -10 dB have been achieved. The input return loss was better than -10 dB up to 3 GHz. Power and linearity performances have been measured and compared to simulations resulting in a very good agreement. At a frequency spacing of 100 kHz, minimum values of output IP3 and output IP2 have been evaluated and found to be 48.5 dBm and 59.3 dBm. At 1 dB power compression point, minimum P out and G P were found to be 37.3 dBm and 13.3 dB, respectively within the whole frequency band.

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“…The circuit scale basically increases in proportion to the number of the PA units. Another approach is the "broadband matching" [5], [6] or "multi-band matching" [7]- [9] that covers all or several operating bands employing specially-designed matching networks (MNs). The former, which has a flat frequency response over all operating bands, is inappropriate to configure a highly efficient PA when the upper and lower limits of the operating bands are far apart.…”

Section: Introductionmentioning

confidence: 99%

Low-Loss Matching Network Design for Band-Switchable Multi-Band Power Amplifier

Fukuda

Furuta

Okumura

et al. 2012

IEICE Trans. Electron.

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SUMMARYThis paper presents a novel design scheme for a bandswitchable multi-band power amplifier (BS-MPA). A key point of the design scheme is configuring multi-section reconfigurable matching networks (MR-MNs) optimally in terms of low loss matching in multiple frequency bands from 0.7 to 2.5 GHz. The MR-MN consists of several matching sections, each of which has a matching block connected to a transmission line via a switch. Power dissipation at an actual on-state switch results in the insertion loss of the MR-MN and depends on how the impedance is transformed by the MR-MN. The proposed design scheme appropriately transforms the impedance of a high power transistor to configure a low loss MR-MN. Numerical analyses show quantitative improvement in the loss using the proposed scheme. A 9-band 3-stage BS-MPA is newly designed following the proposed scheme and fabricated on a multi-layer low temperature co-fired ceramic substrate for compactness. The BS-MPA achieves a gain of over 30 dB, an output power of greater than 33 dBm and a power added efficiency of over 40% at the supply voltage of 4 V in each operating band.

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Two-stage ultrawide-band 5-W power amplifier using SiC MESFET

Cited by 47 publications

References 20 publications

RLC Matched GaN HEMT Power Amplifier with 2 GHz Bandwidth

RLC Matched GaN HEMT Power Amplifier with 2 GHz Bandwidth

5W highly linear GaN power amplifier with 3.4 GHz bandwidth

Low-Loss Matching Network Design for Band-Switchable Multi-Band Power Amplifier

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