Two Synthetic Approaches to Ag3.4In3.7Sb76.4Te16.5 Bulk ­Samples and their Transport Properties

Schröder, Thorsten; Rosenthal, Tobias; Gold, Christian; Scheidt, Ernst‐Wilhelm; Schnick, Wolfgang

doi:10.1002/zaac.201300486

Cited by 3 publications

(1 citation statement)

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“…As typically reported, it has been investigated as potential rewritable data-storage media among the Te-based phase-change materials , and has been utilized as an absorber layer in photovoltaic cells to improve the energy conversion efficiency. , Moreover, AgInTe 2 and its alloyed solid-state solutions and/or composites including the examples of Ag 3.4 In 3.7 Sb 76.4 Te 16.5 , etc. have been intensively investigated for thermoelectric applications in very recent years. − In addition, chalcopyrite-type nanocrystals including AgInTe 2 are also available for in vivo bioimaging and disease diagnosis as NIR-emitting markers, especially for cancer theranostics due to their low biofluid scattering along with minimal absorbance in the low-energy region. , …”

Section: Introductionmentioning

confidence: 99%

Nanoscale AgInTe₂/Si Truncated Quasitetrahedrons for Heterostructured Photodetectors

You¹,

Zhang²,

et al. 2021

ACS Appl. Nano Mater.

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Group I−III−VI 2 semiconductors are promising for the fabrication of electronic and photoelectronic devices because of their tunable band gaps and intensive absorption in visible and near-infrared regions. Here, ternary AgInTe 2 nanostructures have been synthesized via a facilely designed solution-phase procedure at 240−280 °C from AgNO 3 and In(acac) 3 in oleylamine reacted with TeO 2 dissolved in 1-dodecanethiol. They illustrate truncated quasitetrahedrally geometrical shapes from the phosphine-free solution synthetic route and could be spin-coated on silicon wafer to set up a vertical AgInTe 2 /Si heterojunction-based photodetector. The device is highly sensitive to visible and near-infrared illuminance and has remarkable photoresponsive properties with an on/off switch ratio of 780 at a reverse bias of −5 V, a high responsivity (2.82 A W −1 ), specific detectivity (8.12 × 10 11 Jones), and a low noise equivalent power (2.46 × 10 −13 W Hz −1/2 ) at a bias of −2 V. Especially, the device exhibits fast response speeds (τ rise = 5.2 μs, τ fall = 18.4 μs), which would be a vital figure of merit for its technical application. The present work offers an available strategy for the tunable synthesis of ternary and even multiple-component tellurides beyond the demonstrated high-quality AgInTe 2 nanostructures and would provide a simplified way to heterostructure-based photodetectors with high-responsivity and fast-speed performances. KEYWORDS: group I−III−VI 2 semiconductor, chalcopyrite-type telluride, monodisperse AgInTe 2 nanocrystals for broadband photodetection, AgInTe 2 -based photodetector, fast-response photodetector

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Section: Introductionmentioning

confidence: 99%

Nanoscale AgInTe₂/Si Truncated Quasitetrahedrons for Heterostructured Photodetectors

You¹,

Zhang²,

et al. 2021

ACS Appl. Nano Mater.

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High‐Performance AgSbTe₂ Thermoelectrics: Advances, Challenges, and Perspectives

Li,

Hu,

Liu

et al. 2024

Advanced Materials

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Environmental‐friendless and high‐performance thermoelectrics play a significant role in exploring sustainable clean energy. Among them, AgSbTe2 thermoelectrics, benefiting from the disorder in the cation sublattice and interface scattering from secondary phases of Ag2Te and Sb2Te3, exhibit low thermal conductivity and a maximum figure‐of‐merit ZT of 2.6 at 573 K via optimizing electrical properties and addressing phase transition issues. Therefore, AgSbTe2 shows considerable potential as a promising medium‐temperature thermoelectric material. Additionally, with the increasing demands for device integration and portability in the information age, the research on flexible and wearable AgSbTe2 thermoelectrics aligns with contemporary development needs, leading to a growing number of research findings. This work provides a detailed and timely review of AgSbTe2‐based thermoelectrics from materials to devices. Principles and performance optimization strategies are highlighted for the thermoelectric performance enhancement in AgSbTe2. The current challenges and future research directions of AgSbTe2‐based thermoelectrics are pointed out. This review will guide the development of high‐performance AgSbTe2‐based thermoelectrics for practical applications.

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Crystallization kinetics and thermodynamics of an Ag–In–Sb–Te phase change material using complementary in situ microscopic techniques

McGieson

Bird

Barr

et al. 2022

Journal of Materials Research

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Two Synthetic Approaches to Ag_3.4In_3.7Sb_76.4Te_16.5 Bulk Samples and their Transport Properties

Cited by 3 publications

References 32 publications

Nanoscale AgInTe₂/Si Truncated Quasitetrahedrons for Heterostructured Photodetectors

Nanoscale AgInTe₂/Si Truncated Quasitetrahedrons for Heterostructured Photodetectors

High‐Performance AgSbTe₂ Thermoelectrics: Advances, Challenges, and Perspectives

Crystallization kinetics and thermodynamics of an Ag–In–Sb–Te phase change material using complementary in situ microscopic techniques

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Two Synthetic Approaches to Ag3.4In3.7Sb76.4Te16.5 Bulk ­Samples and their Transport Properties

Cited by 3 publications

References 32 publications

Nanoscale AgInTe2/Si Truncated Quasitetrahedrons for Heterostructured Photodetectors

Nanoscale AgInTe2/Si Truncated Quasitetrahedrons for Heterostructured Photodetectors

High‐Performance AgSbTe2 Thermoelectrics: Advances, Challenges, and Perspectives

Crystallization kinetics and thermodynamics of an Ag–In–Sb–Te phase change material using complementary in situ microscopic techniques

Contact Info

Product

Resources

About

Two Synthetic Approaches to Ag_3.4In_3.7Sb_76.4Te_16.5 Bulk Samples and their Transport Properties

Nanoscale AgInTe₂/Si Truncated Quasitetrahedrons for Heterostructured Photodetectors

Nanoscale AgInTe₂/Si Truncated Quasitetrahedrons for Heterostructured Photodetectors

High‐Performance AgSbTe₂ Thermoelectrics: Advances, Challenges, and Perspectives