Two-terminal millimeter-wave sources

MOVPE Deposition of AlAs/In0.53Ga0.47As/InP Resonant Tunneling Heterostructure Performing High PVR Parameter

“…RT diodes made by AlAs/In 0.53 Ga 0.47 As/InP material having PVR up to 28 have been presented in [8,9]. However, the heterostructures have been grown by MBE technique.…”

Effect of microwave irradiation on the resistance of Au-TiB x -Ge-Au-n-n +-n ++-GaAs(InP) ohmic contacts

“…Gallium arsenide and indium phosphide are the main semiconductors used in the fabrication of dis crete microwave devices and integrated circuits based on these materials [1][2][3]. Along with the high quality of the initial semiconductor structures, one of the main conditions for the reliable operation of these devices is the presence of low resistance thermally sta ble highly reliable ohmic contacts to them.…”

Optimization of Micromachined Reflex Klystrons for Operation at Terahertz Frequencies

“…The sources that do exist are either fragile vacuum tube devices, which require high-voltage power supplies and magnetic fields or deliver very small amounts of power. Typical of the latter category is the resonant tunnelling diode (RTD) [9]- [11] oscillator, which has achieved a maximum frequency of 712 GHz, but with power levels that are too low to be useful in real applications [9]. Quantum cascade lasers, based on radiative intersubband transitions in quantum-well structures and developing a few milliwatts of terahertz power, have been reported recently, but these devices do not yet operate at room temperature and are difficult to tune [12].…”