Two-Trap-Assisted Tunneling Model for Post-Breakdown&lt;tex&gt;$I-V$&lt;/tex&gt;Characteristics in Ultrathin Silicon Dioxide

Wu, You‐Lin; Lin, Shi-Tin

doi:10.1109/tdmr.2006.870351

Cited by 28 publications

(14 citation statements)

References 20 publications

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“…Each of the three transport mechanisms that were investigated in detail resulted in the same estimate of 0.1 eV for the LRS electron barrier, suggesting that useful information regarding device physical parameters can be obtained from all three analyses. An accurate fit to the F-N expression is often viewed as an indicator of trap-assisted tunneling 25 and has been used to identify TAT as a predominant current transport mechanism in Si-rich SiO x (x $ 0.9) RRAM devices. 26 The LRS I-V response is plotted on a linear scale in Fig.…”

Section: B Temperature Dependence Of Current Transport Behaviors Andmentioning

confidence: 99%

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

Chang

Fowler

Chen

et al. 2014

Journal of Applied Physics

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Multilevel programing and charge transport characteristics of intrinsic SiOx-based resistive switching memory are investigated using TaN/SiOx/n++Si (MIS) and TiW/SiOx/TiW (MIM) device structures. Current transport characteristics of high- and low-resistance states (HRS and LRS) are studied in both device structures during multilevel operation. Analysis of device thermal response demonstrates that the effective electron energy barrier is strongly dependent on the resistance of the programed state, with estimates of 0.1 eV in the LRS and 0.6 eV in the HRS. Linear data fitting and conductance analyses indicate Poole-Frenkel emission or hopping conductance in the low-voltage region, whereas Fowler-Nordheim (F-N) or trap-assisted tunneling (TAT) is indicated at moderate voltage. Characterizations using hopping transport lead to hopping distance estimates of ∼1 nm in the LRS for both device structures. Relative permittivity values (εr) were extracted using the Poole-Frenkel formulism and estimates of local filament temperature, where εr values were ∼80 in the LRS and ∼4 in the HRS, suggesting a strongly polarized medium in the LRS. The onset of F-N tunneling or TAT corresponds to an observed “overshoot” in the I-V response with an estimated threshold of 1.6 ± 0.2 V, in good agreement with reported electro-luminescence results for LRS devices. Resistive switching is discussed in terms of electrochemical reactions between common SiO2 defects, and specific defect energy levels are assigned to the dominant transitions in the I-V response. The overshoot response in the LRS is consistent with TAT through either the Eγ' oxygen vacancy or the hydrogen bridge defect, both of which are reported to have an effective bandgap of 1.7 eV. The SET threshold at ∼2.5 V is modeled as hydrogen release from the (Si-H)2 defect to generate the hydrogen bridge, and the RESET transition is modeled as an electrochemical reaction that re-forms (SiH)2. The results provide further insights into charge transport and help identify potential switching mechanisms in SiOx-based unipolar resistive switching memory.

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Section: B Temperature Dependence Of Current Transport Behaviors Andmentioning

confidence: 99%

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

Chang

Fowler

Chen

et al. 2014

Journal of Applied Physics

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“…The samples, with and without being subjected to Co 60 c-ray irradiation, were individually loaded into an atomic force microscopy (AFM) system (SEIKO 300 HV) to measure current-voltage (I-V) characteristics. To extend the measurement capability, a semiconductor parameter analyzer (Agilent 4156C) was connected to the AFM system (see [24] for configuration details). A conductive Au-coated Si tip (CAFM tip) was used for measuring and as the top electrode such that the RRAM device has a structure of Au/HfO 2 /Ti on a Mo substrate.…”

Section: Methodsmentioning

confidence: 99%

Study of radiation hardness of HfO2-based resistive switching memory at nanoscale by conductive atomic force microscopy

Lin

Hwang

et al. 2015

Microelectronics Reliability

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“…C-AFM can simultaneously map topography and current distributions of a sample. Numerous studies have been realised on thin SiO 2 films on Si substrates using this technique (Porti et al 2002(Porti et al , 2003(Porti et al , 2007Wu and Lin 2006;Wu et al 2007Wu et al , 2008Hourani et al 2011). But, at this day, no clear explanation was provided to understand the mechanisms involved at nanoscale in stressed and broken-down thin films.…”

Section: Introductionmentioning

confidence: 99%

“…The most accomplished works can be attributed to Porti et al (2002Porti et al ( , 2003Porti et al ( , 2007 and Wu et al (2007Wu et al ( , 2008Wu and Lin 2006). Both authors have shown that oxide degradation exhibits two aspects.…”

Section: Introductionmentioning

confidence: 99%

Conductive atomic force microscopy as a tool to reveal high ionising dose effects on ultra thin SiO2/Si structures

Arinero¹,

Touboul²,

Ramonda³

et al. 2012

Appl Nanosci

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The electrical stress behaviour of non-irradiated and irradiated (2 to 7-nm thick) SiO 2 /Si structures is investigated using conductive-atomic force microscopy. A protocol based on the successive application of two rampedvoltage stresses (RVS) on each test point is performed. The environmental implementation conditions of such an experiment are then investigated. A statistical approach based on the use of Weibull distributions is also adopted. Before irradiation, for the thinnest samples, it is shown evidence of stress-induced trap-assisted tunnelling leading to a high decrease in threshold voltages on the second RVS. After high-dose X-ray irradiations, the first RVS exhibit voltage-shift effects increasing with the oxide film thickness, whereas for the second RVS, no additional effect is observed. The high locality of these measurements, sensitive to a few tens of trapped charges, is therefore demonstrated and constitutes a new step towards a better understanding of oxide degradation mechanisms due to radiation effects.

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Two-Trap-Assisted Tunneling Model for Post-Breakdown<tex>$I-V$</tex>Characteristics in Ultrathin Silicon Dioxide

Cited by 28 publications

References 20 publications

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

Study of radiation hardness of HfO2-based resistive switching memory at nanoscale by conductive atomic force microscopy

Conductive atomic force microscopy as a tool to reveal high ionising dose effects on ultra thin SiO2/Si structures

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