Twofold symmetry in the surface electronic structure of ZnSe(001)-c(2×2): Theory and experiment

Pluciński, Ł.; Weigand, Wolfgang; Kumpf, Christian; Heske, Clemens; Kosuch, R.; Schallenberg, T.; Molenkamp, L. W.; Umbach, E.; Johnson, Robert L.

doi:10.1016/j.susc.2005.04.017

Cited by 6 publications

(2 citation statements)

References 24 publications

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“…Прогресс в конструировании светоизлу-чающих (лазерных) диодов на основе ZnSe для зелено-голубой области спектра [9][10][11] возродил интерес к фундаментальным свойствам этого материала. Успешное применение в фотонике подтолкнуло к масштабным экс-периментальным и теоретическим исследованиям атом-ных, геометрических и электронных свойств его поверх-ностных слоев [12][13][14][15][16][17][18][19][20]. Благодаря ZnSe и родственным ему соединениям II−VI появились новые возможности для изготовления разбавленных магнитных полупровод-ников и интерфейсов ферромагнетик/соединение II−VI для создания устройств спинтроники.…”

Section: Introductionunclassified

Атомная и электронная структура реконструкций поверхности (111) в кристаллах ZnSe и CdSe

Бекенев¹,

Зубкова²

2018

Физика Твердого Тела

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The atomic and electron structure of four variants of polar (111)-(2 × 2) surfaces in ZnSe and CdSe terminated by a cation, namely, the ideal, relaxed, reconstructed, and relaxed after reconstruction surfaces, are calculated for the first time from the first principles. The surface is simulated by a film with a thickness of 12 atomic layers and a vacuum gap of ~16 Å in the layered superlattice approximation. Four fictitious hydrogen atoms with a charge of 0.5 electrons each are added for closing dangling Se bonds on the opposite side of the film. Ab initio calculations are performed using the QUANTUM ESPRESSO software based on the density functional theory. It is shown that relaxation results in splitting of atomic layers. We calculate and analyze the band structures and total and layer-wise densities of electron states for four variants of the surface.

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Section: Introductionunclassified

Атомная и электронная структура реконструкций поверхности (111) в кристаллах ZnSe и CdSe

Бекенев¹,

Зубкова²

2018

Физика Твердого Тела

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“…In this paper we use our recent angle-resolved photoemission measurements on the ZnSe(001) surface [5,6], together with LDA and GW calculations, to analyze the ZnSe-bulk conduction bands. We find that that ARPES measurements describe not only the occupied valence bands, but in addition, contain interesting information about the unoccupied part of the electronic structure of semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Angle‐resolved photoemission on ZnSe(001): determination of conduction band quasiparticle shifts

Fleszar

Hanke

Weigand

et al. 2007

Phys. Status Solidi (c)

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Angle-resolved photoemission measurements have been performed on the ZnSe(001) surface and analyzed using ab initio LDA and GW calculations. The key point of this analysis consists of a comparison between measured and calculated photoemission spectra. We suggest that matching the main dispersive peaks in experiment and theory leads to the determination of quasiparticle shifts of the conduction bands relative to their LDA position. It is found that these experimental shifts largely exceed the calculated GW-quasiparticle shifts leading to an increased free-electron-like character of the photoemission final states as compared to the LDA calculations.

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Photon- and electron-induced surface voltage in electron spectroscopies on ZnSe(001)

Cantoni

Bertacco

Brambilla

et al. 2009

Journal of Electron Spectroscopy and Related Phenomena

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Twofold symmetry in the surface electronic structure of ZnSe(001)-c(2×2): Theory and experiment

Cited by 6 publications

References 24 publications

Атомная и электронная структура реконструкций поверхности (111) в кристаллах ZnSe и CdSe

Атомная и электронная структура реконструкций поверхности (111) в кристаллах ZnSe и CdSe

Angle‐resolved photoemission on ZnSe(001): determination of conduction band quasiparticle shifts

Photon- and electron-induced surface voltage in electron spectroscopies on ZnSe(001)

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