Type-I and type-II interband transitions in CdSe/ZnTe quantum well structures

Haetty, J.; Lee, E.H; Luo, Hongyu; Petrou, A.; Warnock, J.

doi:10.1016/s0038-1098(98)00349-4

Cited by 16 publications

(11 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As for component (3), because the available excitation wavelength was tuned to 380-420 nm in the fluorescence upconversion study, it is possible that direct excitation of the CdSe shell was also possible. [20,21] Support of this viewpoint was given by both steady-state and nanosecond time-correlated single-photon counting measurements, in which a weak emission with the peak wavelength of % 550 nm (t f % 13 ns, not shown here) was resolved upon excitation at < 400 nm. In comparison, the 550-nm band was absent in the CdTe coreonly QDs.…”

Section: Resultsmentioning

confidence: 99%

Spectroscopy and Femtosecond Dynamics of Type‐II CdTe/CdSe Core–Shell Quantum Dots

et al. 2006

View full text Add to dashboard Cite

Syntheses of CdTe/CdSe type‐II quantum dots (QDs) using CdO and CdCl2 as precursors for core and shell, respectively, are reported. Characterization was made via near‐IR interband emission, transmission electron microscopy (TEM), energy dispersive spectroscopy (EDX), and X‐ray diffraction (XRD). Femtosecond fluorescence upconversion measurements on the relaxation dynamics of the CdTe core (in CdTe/CdSe) emission and CdTe/CdSe interband emission reveal that as the size of the core increases from 5.3, 6.1 to 6.9 nm, the rate of photoinduced electron separation decreases from 1.96, 1.44 to 1.07 ×1012 s−1. The finite rates of the initial charge separation are tentatively rationalized by the small electron–phonon coupling, causing weak coupling between the initial and charge‐separated states.

show abstract

Section: Resultsmentioning

confidence: 99%

Spectroscopy and Femtosecond Dynamics of Type‐II CdTe/CdSe Core–Shell Quantum Dots

et al. 2006

View full text Add to dashboard Cite

show abstract

“…In samples with InGaAs widths of 11 and 15 nm, only the type-II transition peak appears in the PL spectra. [11][12][13] When samples are excited by an Ar ϩ laser, electrons and holes are generated in the InGaAs layers. 7 As shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…This is consistent with the PL spectra of relatively narrow InGaAs QWs shown in the previous report. 11,13 The presence of spatially separated layers of electrons and holes in InGaAs and AlAsSb, respectively, with high carrier density also produces an electric field in the system. 4, the intensity of the type-I transition increases as the InGaAs width increases.…”

Section: Resultsmentioning

confidence: 99%

Observation of direct (type-I) transitions in type-II InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy

Mozume

Georgiev

Yoshida

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

“…It should also be noted that the reported phenomenon is not limited to the ZnSe/BeTe material system, but should also occur in other heterostructures with a type-II alignment, e.g., CdSe/ZnTe quantum wells. 12,13 This work was supported by the Deutsche Forschungsgemeinschaft ͑through SFB 410͒ and RFBR Grant No. 98-02-16651.…”

Section: Figmentioning

confidence: 99%

Kinetics of radiative recombination in strongly excited ZnSe/BeTe superlattices with a type-II band alignment

Максимов

Zaı̆tsev

Tartakovskii

et al. 1999

Applied Physics Letters

View full text Add to dashboard Cite

We report results of a detailed investigation of type-II superlattices under high density photoexcitation. A strong spectral shift (≈0.5 eV) of the recombination band corresponding to the indirect transition from the ZnSe conduction band to the BeTe valence band in ZnSe/BeTe superlattices with increasing carrier density has been found at T=300 K. The dynamical characteristics of this transition are studied by time-resolved spectroscopy. A model which accounts for the dependence of band bending and lifetimes of spatially separated electrons and holes on the concentration of the photoexcited carriers is developed. Numerical simulations of the photoluminescence kinetics are in very good agreement with experimental results. It turns out that despite the huge band offsets involved, the radiative recombination under high excitation conditions can be nearly as fast as in spatially direct quantum wells.

show abstract

Type-I and type-II interband transitions in CdSe/ZnTe quantum well structures

Cited by 16 publications

References 8 publications

Spectroscopy and Femtosecond Dynamics of Type‐II CdTe/CdSe Core–Shell Quantum Dots

Spectroscopy and Femtosecond Dynamics of Type‐II CdTe/CdSe Core–Shell Quantum Dots

Observation of direct (type-I) transitions in type-II InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy

Kinetics of radiative recombination in strongly excited ZnSe/BeTe superlattices with a type-II band alignment

Contact Info

Product

Resources

About