Type-I Diode Lasers for Spectral Region Above 3 μm

Belenky, Gregory; Shterengas, L.; Kipshidze, G.; Hosoda, Takashi

doi:10.1109/jstqe.2011.2128300

Cited by 89 publications

(52 citation statements)

References 18 publications

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“…Figure 2b shows light-current-voltage characteristics measured in a CW regime for 100-μm-wide, 3-mm-long, coated three-stage cascade lasers. A more than threefold improvement of output power compared to previously reported non-cascade diodes [18] was demonstrated with the three-stage modified cascade design, leading to a record 360-mW output power level near 3.25 μm. The voltage drop across the laser heterostructure was about 2.2 V at the current of 3.5 A, corresponding to the maximum CW output power level.…”

Section: Devices Emitting Above 3 µMmentioning

confidence: 70%

Cascade Type-I Quantum Well GaSb-Based Diode Lasers

et al. 2016

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Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in a spectral region from 1.9 to 3.3 µm. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Coated devices with an~100-µm-wide aperture and a 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 µm, 980 mW near 3 µm, 500 mW near 3.18 µm, and 360 mW near 3.25 µm at 17-20˝C-a nearly or more than twofold increase compared to previous state-of-the-art diode lasers. The utilization of the different quantum wells in the cascade laser heterostructure was demonstrated to yield wide gain lasers, as often desired for tunable laser spectroscopy. Double-step etching was utilized to minimize both the internal optical loss and the lateral current spreading penalties in narrow-ridge lasers. Narrow-ridge cascade diode lasers operate in a CW regime with~100 mW of output power near and above 3 µm and above 150 mW near 2 µm.

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Section: Devices Emitting Above 3 µMmentioning

confidence: 70%

Cascade Type-I Quantum Well GaSb-Based Diode Lasers

et al. 2016

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“…Introduction: Diode lasers with a type-I quantum well (QW) active region and grown on GaSb substrates operate in continuous-wave (CW) regime at room temperature up to 3.44 mm [1]. GaSb-based narrow ridge waveguide lasers with diffraction limited output operating within the spectral region near 3 mm with output of several mWs have been fabricated by different groups [2 -4].…”

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confidence: 99%

Single spatial mode 3 µm diode lasers with continuous-wave output power of 15 mW at room temperature

et al. 2011

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Single spatial mode GaSb-based type-I quantum well diode lasers with 3 mm emission and continuous-wave output power above 15 mW at room temperature are reported. The devices with 5.5 mm-wide ridge waveguides were fabricated by selective wet etching technique.Introduction: Diode lasers with a type-I quantum well (QW) active region and grown on GaSb substrates operate in continuous-wave (CW) regime at room temperature up to 3.44 mm [1]. GaSb-based narrow ridge waveguide lasers with diffraction limited output operating within the spectral region near 3 mm with output of several mWs have been fabricated by different groups [2 -4]. The ridge waveguides of these devices were fabricated using the reactive ion etching (RIE) technology. In this Letter, we report on the development of 3 mm GaSbbased diode lasers with narrow ridge waveguides fabricated by wet etching technique. The wet etching technique can be realised cost-effectively and often has minimal (if any at all) negative effect on protected non-etched sections.The single spatial mode diode lasers generated record output power of 16 mW at 208C. The slow axis beam divergence in the far field was about 308 full-width-at-half-maximum (FWHM) for 5.5 mm-wide ridge waveguide lasers. Studies of the effect of the ridge width on laser efficiency, modal gain and loss revealed that the threshold current density of the narrow ridge lasers (5.5 mm wide) increases due to the extra 8 cm 21 of the internal loss and as a result of the rise of the role of the lateral current spreading effect.

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“…[1,2,3]. The devices operate at voltages below 2 V and demonstrate RT CW power conversion efficiencies in excess of 25% near 2 µm and above 8 % at 3 µm [4]. These results show that Auger recombination does not preclude the CW RT operation of mid-infrared diode lasers.…”

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confidence: 82%

Diode lasers operating in spectral range from 1.9 to 3.5 μm

Shterengas

Kipshidze

Hosoda

et al. 2012

ISLC 2012 International Semiconductor Laser Conference

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Mid-infrared lasers operating at room temperature (RT) in continuous wave (CW) mode are in demand for a variety of applications including laser detection and ranging, spectroscopy and infrared countermeasures. GaSb-based type-I quantum well (QW) diode laser technology addresses this demand providing compact lasers operating in spectral region from 1.9 to 3.4 µm, ex. [1,2,3]. The devices operate at voltages below 2 V and demonstrate RT CW power conversion efficiencies in excess of 25% near 2 µm and above 8 % at 3 µm [4]. These results show that Auger recombination does not preclude the CW RT operation of mid-infrared diode lasers. Low CW RT threshold current densities below 100 and 200 A/cm 2 obtained for 2 and 3 µm diode lasers, respectively revealed a bonus of the narrow bandgap QWs for laser development arising from the low density of states. This fundamental advantage became apparent in experiments after the optical and carrier confinement in active GaInAsSb QWs [5] were improved. This was achieved after the quaternary AlGaAsSb barrier material was replaced with the quinary AlGaInAsSb alloys [6]. In this work we report on progress in development of the metamorphic GaSb-based laser heterostructures and fabrication of the diffraction limited laser diodes.The utilization of a five component alloy enabled independent control over the valence and conduction band edge positions in the QW barrier and waveguide core materials. This flexibility allowed for design optimization that led to significant improvement of the device performance parameters and enabled fabrication of the first generation of the diode lasers operating at RT in CW at wavelength above 3 µm with hundreds of mW of output power. Similar flexibility in the design of the QWs is expected to open novel band engineering opportunities to optimize laser heterostructures for improved CW RT operation and extended wavelength range. One possible way to acquire this flexibility is to establish a growth technology that allows treating the lattice parameter of the device heterostructure as a design variable. This can be achieved by growing compositionally graded buffer layers to mediate the lattice mismatch between the substrate and the device heterostructure [7,8,9]. We designed and developed GaSb-based diode lasers grown onto GaInSb and AlGaInSb metamorphic buffers that increase the lattice constant by 1.6% above that of GaSb. The devices demonstrate high power RT operation with 200 mW of CW output power near 3 µm (Figure 1). The peculiarities of the metamorphic growth and potential to extend the operating wavelength, improve the device parameters and grow antimonide-based materials on GaAs will be discussed.The single spatial mode narrow ridge waveguide diode lasers were fabricated by both dry and wet etching techniques. We have developed two step selective wet etching methodology producing single spatial mode deep etched ridge waveguide lasers emitting above 100 mW CW in the 2 to 2.3 µm spectral region and above 15 mW CW near 3 µm. Experiment showed that the no...

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Type-I Diode Lasers for Spectral Region Above 3 μm

Cited by 89 publications

References 18 publications

Cascade Type-I Quantum Well GaSb-Based Diode Lasers

Cascade Type-I Quantum Well GaSb-Based Diode Lasers

Single spatial mode 3 µm diode lasers with continuous-wave output power of 15 mW at room temperature

Diode lasers operating in spectral range from 1.9 to 3.5 μm

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Type-I Diode Lasers for Spectral Region Above 3 μm

Cited by 89 publications

References 18 publications

Cascade Type-I Quantum Well GaSb-Based Diode Lasers

Cascade Type-I Quantum Well GaSb-Based Diode Lasers

Single spatial mode 3 µm diode lasers with continuous-wave output power of 15 mW at room temperature

Diode lasers operating in spectral range from 1.9 to 3.5 &#x03BC;m

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Diode lasers operating in spectral range from 1.9 to 3.5 μm