Type-I Heterostructure Based on WS<sub>2</sub>/PtS<sub>2</sub> for High-Performance Photodetectors

Wang, Zihan; Zhang, Hui; Wang, Weike; Tan, Chaoyang; Chen, Jiawang; Yin, Shiqi; Zhang, Hanlin; Zhu, Ankang; Li, Gang; Du, Yuchen; Wang, Shaotian; Liu, Fengguang; Li, Liang

doi:10.1021/acsami.2c08827

Cited by 24 publications

(18 citation statements)

References 64 publications

(114 reference statements)

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“…In this process, when light irradiation on the structure, electrons transfer from valance band to higher energy levels above the conduction band and thus allows electrons to pass through the rectangular barrier which is evidence of direct tunneling as shown in Figure 3d. [ 44 ] This phenomenon can enhance the efficiency and illumination intensity of the device owing to the rapid charge transition and reduction of the unwanted dissociation of the excitons. Type‐I band alignment‐based heterostructure are usually employed for light‐emitting diodes applications.…”

Section: Van Der Waals (Vdws) Heterostructurementioning

confidence: 99%

Section: Van Der Waals (Vdws) Heterostructurementioning

confidence: 99%

Section: Van Der Waals (Vdws) Heterostructurementioning

confidence: 99%

“…d) Energy band alignment of WS 2 /PtS 2 type-I heterostructure under irradiation. (d) Reproduced with permission [44]. Copyright 2022, American Chemical Society e) Band alignment MoSe 2 /FePS 3 based type-II heterostructure.…”

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confidence: 99%

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confidence: 99%

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Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors

Ahmad

Peng

Khan

et al. 2023

Adv Funct Materials

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Van der Waals (vdWs) heterostructures enable bandgap engineering of different 2D materials to realize the interlayer transition via type‐II band alignment leading to broaden spectrum that is beyond the cut‐off wavelength of individual 2D materials. Interlayer transition has a significant effect on the optoelectronic performance of vdWs heterostructure devices, and strong interlayer transition in 2D vdWs heterojunction is always demandable for sufficient charge transfer and rapid speed response. Herein, a state‐of‐the‐art review is presented on recent progress on interlayer transition in vdWs heterostructures for near‐infrared (NIR) photodetectors. First, the general synthesis techniques for vdWs heterostructures, band alignments in the vdWs heterostructures are provided. Then, the mechanism of interlayer transition in vdWs heterostructure and recent progress on interlayer transition in vdWs heterostructures for NIR photodetectors are summarized. Afterward, some worthy applications of NIR photodetectors are reviewed in related areas of this topic. At the last, an outlook, challenges, and future research directions of vdWs heterostructures for photodetectors at broaden response spectrum are presented.

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Section: Van Der Waals (Vdws) Heterostructurementioning

confidence: 99%

Section: Van Der Waals (Vdws) Heterostructurementioning

confidence: 99%

Section: Van Der Waals (Vdws) Heterostructurementioning

confidence: 99%

mentioning

confidence: 99%

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confidence: 99%

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Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors

Ahmad

Peng

Khan

et al. 2023

Adv Funct Materials

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Optoelectronic Neuromorphic Logic Memory Device Based on Ga₂O₃/MoS₂ Van der Waals Heterostructure with High Rectification and On/Off Ratios

Zhang,

Liu,

Liu

et al. 2024

Adv Funct Materials

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It is crucial to develop advanced optoelectronic devices that incorporate multiple functions, including sensing, storage, and computing, which is considered at the forefront of semiconductor optoelectronics to meet emerging functional diversification. In this study, by stacking the n‐type Ga2O3 with the n‐type MoS2 flakes, a Ga2O3/MoS2 heterostructure optoelectronic device with high rectification ratio of ≈105 and on/off ratio of ≈108 is fabricated, which achieves high detectivity of 1.34 × 109 Jones and high responsivity of 28.92 mA/W. More importantly, the Ga2O3/MoS2 heterostructure device shows potential ability to integrate sensing and memorizing, simultaneously, which can be used as artificial neuromorphic synaptic. The device exhibits excellent photo‐induced synaptic functions including short‐term plasticity, long‐term plasticity, and paired‐pulse facilitation, realizing the ability to couple light and electrical signals by Pavlovian associative learning. At last, the device also demonstrates the information processing ability to act as optoelectronic logic gate AND by synergistically regulating the light on/off states and gate voltage. The research introduces an innovative strategy for the development of next‐generation optoelectronic devices which are highly integrated with sensing, memory, and logic processing functions, demonstrating great application prospects in constructing an efficient artificial neuromorphic visual and logic systems.

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Ultrafast Polarization Sensitive Photodetector Based on MoS₂/Ta₂Pd₃Se₈ Hybrid Dimensional Heterostructure

Ke,

Zhou,

Larionov

et al. 2023

Advanced Optical Materials

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Van der Waals (vdWs) heterostructures based on low dimensional semiconducting materials offer tremendous opportunities in investigating next generation electronic and optoelectronic devices. Careful design based on combinations of different crystal structures and their band alignment engineering in such architectures are crucial for realizing specialized functionality and preferable performance. Here, a polarized light sensitive photodetector with high efficiency and ultrafast response speed based on hybrid dimensional MoS2/Ta2Pd3Se8 vdWs heterostructure, which is owing to the unilateral depletion region as formed between the n–n junction, is reported. In particular, under ultraviolet light irradiation, the device exhibits a high external quantum efficiency of 970%, and the device shows an ultrafast response speed of 1.3 µs under visible light excitation. Moreover, the 1D Ta2Pd3Se8 crystal introduces a highly anisotropic feature of the heterostructure, so as to realize selective detection to linear polarized light with an anisotropic ratio up to 0.66. This work sheds light on the potential applications of hybrid dimensional vdWs heterostructures, which may provide new insight for exploring high performance photodetectors with advanced functions.

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Type-I Heterostructure Based on WS₂/PtS₂ for High-Performance Photodetectors

Cited by 24 publications

References 64 publications

Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors

Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors

Optoelectronic Neuromorphic Logic Memory Device Based on Ga₂O₃/MoS₂ Van der Waals Heterostructure with High Rectification and On/Off Ratios

Ultrafast Polarization Sensitive Photodetector Based on MoS₂/Ta₂Pd₃Se₈ Hybrid Dimensional Heterostructure

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Type-I Heterostructure Based on WS2/PtS2 for High-Performance Photodetectors

Cited by 24 publications

References 64 publications

Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors

Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors

Optoelectronic Neuromorphic Logic Memory Device Based on Ga2O3/MoS2 Van der Waals Heterostructure with High Rectification and On/Off Ratios

Ultrafast Polarization Sensitive Photodetector Based on MoS2/Ta2Pd3Se8 Hybrid Dimensional Heterostructure

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Type-I Heterostructure Based on WS₂/PtS₂ for High-Performance Photodetectors

Optoelectronic Neuromorphic Logic Memory Device Based on Ga₂O₃/MoS₂ Van der Waals Heterostructure with High Rectification and On/Off Ratios

Ultrafast Polarization Sensitive Photodetector Based on MoS₂/Ta₂Pd₃Se₈ Hybrid Dimensional Heterostructure