Type-II Band Profile of GaAs/Si Hetero Junctions by Surface Activated Bonding for Hybrid Tandem Cells

Abstract

We fabricated p + -GaAs/n-Si and n + -GaAs/p-Si junctions by using surface activated bonding and measured their current-voltage and capacitance-voltage characteristics at room temperature. Their conduction band offset, which was extracted from the capacitancevoltage characteristics, was 0.57-0.84 eV. The results suggested that the band profiles of junctions had type-II features, which was likely to be preferable for fabricating low-resistance tunnelling junctions in hybrid tandem cells. The influence of possible interface states on the electrical properties of junctions was also discussed using the charge neutral level model. 10.1149/06405.0235ecst ©The Electrochemical Society ECS Transactions, 64 (5) 235-242 (2014) 235 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see

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