Type-II GaInAsSb/InP Uniform Absorber High Speed Uni-Traveling Carrier Photodiodes

Arabhavi, Akshay M.; Chaudhary, Rimjhim; Flückiger, Ralf; Marti, Diego; Hamzeloui, Sara; Ciabattini, Filippo; Quan, Wei; Leich, Martin; Ostinelli, O.; Bolognesi, C.R.

doi:10.1109/jlt.2020.3043537

Cited by 14 publications

(9 citation statements)

References 19 publications

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“…Photodiodes of varying areas were fabricated by successive optical lithography and wet etching steps [11], followed by a low-temperature (≤ 190°C) Teflon-based etch-back planarization process for co-planar waveguide (CPW) probe pad deposition [16]. Fig.…”

Section: Epitaxial Structure and Device Fabricationmentioning

confidence: 99%

“…where, R is the sum of PD series resistance and the load resistance of 50 Ω, and C is the PD capacitance inclusive of the junction capacitance at a given bias and the parasitic capacitance. The transit time-limited cut-off frequency of a 100 nm GaInAsSb-based absorber has previously been demonstrated to be around 274 GHz [11]. The devices exhibit RClimited behavior and have significant scope for improving the overall bandwidth by scaling the area.…”

Section: B 110 Ghz Small-signal Equivalent Circuitmentioning

confidence: 99%

“…We previously demonstrated "Type-II" GaInAsSb/InP UTC-PDs with improved electron transport properties compared to GaInAs/InP and GaAsSb/InP UTC-PDs [11]- [13]. GaAs 0.51 Sb 0.49 grown lattice-matched to InP displays a relatively low electron mobility because of its low Γ-L valley separation (∆ Γ-L ≈ 90 meV) [14].…”

Section: Introductionmentioning

confidence: 99%

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Wideband Type-II GaInAsSb/InP Uni-Traveling Carrier Photodiodes for Near 300 Gbps Communications

Chaudhary,

Arabhavi,

Kulmer

et al. 2024

J. Lightwave Technol.

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We report the wideband performance of uniform Type-II GaInAsSb/InP UTC-PDs for optical data communications near 300 Gbps. A wide bandwidth of >110 GHz is achieved for a device area of 50 µm 2 . In signal transmission measurements, the present UTC-PDs show a low Bit-Error Rate (BER) and a high Signal-to-Noise Ratio (SNR) of more than 18 dB at data rates as high as 288 Gbps (96 GBd, PAM-8) without postamplification electronics. The work demonstrates the suitability of GaInAsSb/InP UTC-PDs for optical data transmission at bit rates approaching 300 Gbps.

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Section: Epitaxial Structure and Device Fabricationmentioning

confidence: 99%

Section: B 110 Ghz Small-signal Equivalent Circuitmentioning

confidence: 99%

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Wideband Type-II GaInAsSb/InP Uni-Traveling Carrier Photodiodes for Near 300 Gbps Communications

Chaudhary,

Arabhavi,

Kulmer

et al. 2024

J. Lightwave Technol.

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“…More specifically, two varieties of type I UTC-PDs have been characterized: (i) an InGaAs/InGaAsP UTC-PD with rectangular waveguides, through which the light is guided evanescently into the active region [22]; (ii) an In-GaAs/InP UTC-PD with a simple top-illuminated structure. The type II device consist of a GaInAsSb/InP UTC-PD also with a simple top-illuminated structure [23]. Several geometries of the UTC-PDs were investigated in the study, with their active areas listed in Table 1.…”

Section: Compact Model Validationmentioning

confidence: 99%

Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design

et al. 2021

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Due to the continuous increase in data traffic, it is becoming imperative to develop communication systems capable of meeting the throughput requirements. Monolithic Opto-Electronic Integrated Circuits (OEICs) are ideal candidates to meet these demands. With that in mind, we propose a compact and computationally efficient model for Uni-Traveling Carrier Photodiodes (UTC-PDs) which are a key component of OEICs because of their high bandwidth and RF output power. The developed compact model is compatible with existing SPICE design software, enabling the design of beyond 5G and terahertz (THz) communication circuits and systems. By introducing detailed physical equations describing, in particular, the dark current, the intrinsic series resistance, and the junction capacitance, the model accurately captures the physical characteristics of the UTC-PD. The model parameter extraction follows a scalable extraction methodology derived from that of the bipolar and CMOS technologies. A detailed description of the de-embedding process is presented. Excellent agreement between the compact model and measurements has been achieved, showing model versatility across various technologies and scalability over several geometries.

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“…Performance comparisons between DHBTs and UTC-PDs implemented with p-type GaAsSb or GaInAsSb base/absorber layers on InP suggest that L-valley population effects play a role in the ultimate device performance. 13,14 Securing experimental data on the electronic transport properties and band structure specifics of GaAs x Sb 1Àx (x $ 0.5) is thus of scientific and technical interest. To gain insight into electron transport in GaAsSb, we characterized Hall electron mobilities as a function of the electron concentration in n-type S-doped GaAs 0.51 Sb 0.49 , Ga 0.47 In 0.53 As, and Ga 0.76 In 0.24 As 0.67 Sb 0.33 alloys grown on InP at 300 and 77 K. For lower electron concentrations, in marked contrast to the other two alloys, GaAs 0.51 Sb 0.49 shows a sharp increase in 77 K electron mobility, which provides characteristic evidence of Lvalley (de)population effects.…”

mentioning

confidence: 99%

Г-L intervalley separation and electron mobility in GaAsSb grown on InP: Transport comparison with the GaInAs and GaInAsSb alloys

Bolognesi

Ostinelli

2021

Applied Physics Letters

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GaAs 0.51 Sb 0.49 is lattice-matched to InP and finds electron transport applications in base or absorber layers in high-speed heterostructure bipolar transistors or photodiodes, because its staggered ("type-II") band alignment with InP favors electron injection across abrupt heterojunctions. Little remains known about electron transport properties and band structure details of GaAs x Sb 1Àx near x ¼ 0.5. Particularly, based on the C-L intervalley separation in binary constituents (D CL ¼ 84 meV in GaSb and 290 meV in GaAs at 300 K), interpolation suggests a low C-L separation in GaAs 0.51 Sb 0.49 before considering energy gap bowing effects. To gain insight into electron transport in GaAs 0.51 Sb 0.49 , we characterized experimental Hall electron mobilities vs carrier concentration at 300 and 77 K in n-type GaAs 0.51 Sb 0.49 , Ga 0.47 In 0.53 As, and Ga 0.76 In 0.24 As 0.67 Sb 0.33 alloys nearly matched to InP. In marked contrast to the other two alloys, GaAs 0.51 Sb 0.49 exhibits a sharp rise in 77 K electron mobility, which evidences L-valley de-population for lower electron concentrations. A two-band transport analysis reveals a C-L valley separation D CL ¼ 91 meV at 77 K, significantly lower than values recommended in the literature. Based on the reported temperature variations of D CL in GaAs and GaSb, 84 < D CL < 95 meV is expected at 300 K. The corresponding GaAs x Sb 1Àx L-valley bowing parameter is c L ¼ 1.63 eV, significantly higher than the 1.1-1.2 eV recommended in the literature. In contrast to GaAs x Sb 1Àx , GaInAsSb grown on InP displays a strong alloy scattering, which limits its low-temperature electron mobility.

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Type-II GaInAsSb/InP Uniform Absorber High Speed Uni-Traveling Carrier Photodiodes

Cited by 14 publications

References 19 publications

Wideband Type-II GaInAsSb/InP Uni-Traveling Carrier Photodiodes for Near 300 Gbps Communications

Wideband Type-II GaInAsSb/InP Uni-Traveling Carrier Photodiodes for Near 300 Gbps Communications

Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design

Г-L intervalley separation and electron mobility in GaAsSb grown on InP: Transport comparison with the GaInAs and GaInAsSb alloys

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