Type-II InGaN-GaNAs quantum wells for lasers applications

Arif, Ronald A.; Zhao, Hongping; Tansu, Nelson

doi:10.1063/1.2829600

Cited by 108 publications

(68 citation statements)

References 22 publications

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“…The use of AlGaN tensile barriers 44 will potentially result in the strain compensation and improved barrier confinement in type-I GaNAs QW structure. In addition, the use of dilute-As GaNAs alloy had previously been suggested in type-II InGaN / dilute-As GaNAs QWs 27,28 for addressing the charge separation issue in the QW. The use of dilute-As GaNAs with large valence band offset in type-II QW structure results in strong hole confinement, which in turn increase the electron-hole wavefunction overlap in polar InGaN-based QWs resulting in improved spontaneous emission rate and optical gain.…”

Section: Resultsmentioning

confidence: 99%

“…The use of dilute-As GaNAs with large valence band offset in type-II QW structure results in strong hole confinement, which in turn increase the electron-hole wavefunction overlap in polar InGaN-based QWs resulting in improved spontaneous emission rate and optical gain. 27,28 …”

Section: Resultsmentioning

confidence: 99%

“…The advantage of this alignment for a material system is that it can be directly connected to the physical situation of photoelectrode 33,34 and active regions for lasers or LEDs. 27,28 In the potential line-up method, the calculation of valence band offset (VBO) between two different materials is a combination of two terms which are the band structure term (∆E v ) and the electrostatic term (∆V). For the band structure term, it is defined as the difference between the top of the valence bands of two bulk materials with respect to the average electrostatic potential at core.…”

Section: Methodsmentioning

confidence: 99%

“…Dilute-arsenic GaNAs-based alloy has yet to be implemented into devices and the available literature published on this alloy subject is severely limited. 5,[19][20][21][22][23][24][25][26][27][28] Li and co-workers first succeeded in incorporating As into thin film GaN through metal-organic chemical vapor deposition (MOCVD), and the redshift of band gap energy of the dilute-As GaNAs alloy was observed in the photoluminescence study. 5 Further studies have also shown successful incorporation of As-content up to 7% into GaN material through MOCVD, 20 and synthesis of GaNAs alloy in full composition range through molecular beam epitaxy (MBE) was recently reported.…”

Section: Introductionmentioning

confidence: 99%

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First-principle natural band alignment of GaN / dilute-As GaNAs alloy

Tan

Tansu

2015

AIP Advances

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Density functional theory (DFT) calculations with the local density approximation (LDA) functional are employed to investigate the band alignment of dilute-As GaNAs alloys with respect to the GaN alloy. Conduction and valence band positions of dilute-As GaNAs alloy with respect to the GaN alloy on an absolute energy scale are determined from the combination of bulk and surface DFT calculations. The resulting GaN / GaNAs conduction to valence band offset ratio is found as approximately 5:95. Our theoretical finding is in good agreement with experimental observation, indicating the upward movements of valence band at low-As content dilute-As GaNAs are mainly responsible for the drastic reduction of the GaN energy band gap. In addition, type-I band alignment of GaN / GaNAs is suggested as a reasonable approach for future device implementation with dilute-As GaNAs quantum well, and possible type-II quantum well active region can be formed by using InGaN / dilute-As GaNAs heterostructure.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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First-principle natural band alignment of GaN / dilute-As GaNAs alloy

Tan

Tansu

2015

AIP Advances

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“…Some of the main issues affecting the LED performance and the corresponding solutions reported in the literature include: (1) Polarization induced quantum confined Stark effect (QCSE) in quantum wells (QWs) separates electrons and holes spatially and reduces the optical matrix element. Staggered InGaN QWs [2] and type-II QWs [3,4] have been proposed to improve the optical matrix element. (2) Electron overflow from the QWs to the p-GaN region gives rise to the quantum efficiency droop at high current density [5,6].…”

Section: Introductionmentioning

confidence: 99%

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes

Kyaw¹,

Zhang²,

Liu³

et al. 2014

Opt. Express

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N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n-GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device.

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Electronic and optical properties of staggered InGaN/InGaN quantum‐well light‐emitting diodes

Park

Ahn

Koo³

et al. 2009

Physica Status Solidi (a)

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Electronic and optical properties of 440 and 530 nm staggered InGaN/InGaN/GaN quantum‐well (QW) light‐emitting diodes are investigated using the multiband effective‐mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure requires a slightly larger In composition than the conventional QW structure to obtain a given wavelength. The spontaneous emission is found to be improved with the inclusion of the staggered layer for QW structures with a relatively thick well width and the longer wavelength (λ = 530 nm). On the other hand, in the case of QW structures with a relatively thin well width (Lw = 2 nm), the spontaneous emission peak is almost unaffected by a staggered layer.

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Type-II InGaN-GaNAs quantum wells for lasers applications

Cited by 108 publications

References 22 publications

First-principle natural band alignment of GaN / dilute-As GaNAs alloy

First-principle natural band alignment of GaN / dilute-As GaNAs alloy

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes

Electronic and optical properties of staggered InGaN/InGaN quantum‐well light‐emitting diodes

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