2005
DOI: 10.1002/pssa.200521179
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Types and origin of dislocations in large GaAs and InP bulk crystals with very low dislocation densities

Abstract: Dedicated to Professor Horst P. Strunk on the occasion of his 65th birthday PACS 61.72.Ff, 61.72.Lk, 81.05.Ea, 81.10.Fq Bulk GaAs and InP crystals with diameter of 4″ or more can now be grown with very low dislocation densities (EPD considerably below 1000 cm -2 ) using the Vertical Gradient Freeze (VGF) growth technique and rigorous process optimization by the aid of numerical simulation. It turns out that the usually dominating 60°-dislocations are no longer the dominating type if the dislocation density … Show more

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Cited by 9 publications
(5 citation statements)
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“…However, the mechanisms of the formation of other dislocation types are not always clear. A summary of the current knowledge can be found in [5].…”
Section: Inp and Gaasmentioning
confidence: 99%
“…However, the mechanisms of the formation of other dislocation types are not always clear. A summary of the current knowledge can be found in [5].…”
Section: Inp and Gaasmentioning
confidence: 99%
“…The close collaboration between CGL and FCM on the further improvement of VGF growth of GaAs continued until 2003 with a large series of publications . The transfer of this VGF technology to FCM was very successful.…”
Section: Development Of Industrial Singe Crystal Melt Growth Technolomentioning
confidence: 99%
“…Instead of the typical stress-induced 60 • dislocations other dislocation types dominate. Within the cross they belong to the (010)1/2 [101] system [60,61]. There arise two important questions having not yet complete answers up to now.…”
Section: Dislocationsmentioning
confidence: 99%
“…In fact, looking carefully on an as-grown VGF crystal cone the border between the {111} facets is not planar but rather they are interlocked with each other. Such a mechanism seems to be kinetically quite uncontrollable and, probably, able to generate dislocations by lattice misfits between the meeting Ga and As facets [61]. Such an explanation would favor the growth with a flat bottom from a seed of the same diameter [62,63] in order to maintain the rotational symmetry without pronounced facetting.…”
Section: Dislocationsmentioning
confidence: 99%
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