1965
DOI: 10.1002/bbpc.19650690207
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Über den chemischen Zustand und das elektrische Moment der Oberfläche von Germanium in Kontakt mit wäßrigen Elektrolytlösungen

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Cited by 53 publications
(19 citation statements)
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“…The slopes give an acceptor concentration in the range N A ¼ 6 Â 10 15 to 7 Â 10 15 cm À3 ; using for the mobility the value 1900 cm 2 V À1 s À1 (probably overestimated for ordinary commercial crystals [21]) we obtain resistivity values around 0.5 X cm, in substantial agreement with the value indicated by the supplier. The estimated flatband position is E FB ffi À0:50 V SCE and E FB ffi À0:43 V SCE at pH 13 and 12, respectively, in substantial agreement with available literature data for an anodically polarised, hydroxyl covered surface [5,[22][23][24][25]. The observed dependence of E FB on pH can be attributed to the dissociation of surface acidic groups >Ge(OH) 2 [5,23].…”
Section: Impedance Measurements and Evaluation Of Flatbandsupporting
confidence: 74%
See 2 more Smart Citations
“…The slopes give an acceptor concentration in the range N A ¼ 6 Â 10 15 to 7 Â 10 15 cm À3 ; using for the mobility the value 1900 cm 2 V À1 s À1 (probably overestimated for ordinary commercial crystals [21]) we obtain resistivity values around 0.5 X cm, in substantial agreement with the value indicated by the supplier. The estimated flatband position is E FB ffi À0:50 V SCE and E FB ffi À0:43 V SCE at pH 13 and 12, respectively, in substantial agreement with available literature data for an anodically polarised, hydroxyl covered surface [5,[22][23][24][25]. The observed dependence of E FB on pH can be attributed to the dissociation of surface acidic groups >Ge(OH) 2 [5,23].…”
Section: Impedance Measurements and Evaluation Of Flatbandsupporting
confidence: 74%
“…The estimated flatband position is E FB ffi À0:50 V SCE and E FB ffi À0:43 V SCE at pH 13 and 12, respectively, in substantial agreement with available literature data for an anodically polarised, hydroxyl covered surface [5,[22][23][24][25]. The observed dependence of E FB on pH can be attributed to the dissociation of surface acidic groups >Ge(OH) 2 [5,23].…”
Section: Impedance Measurements and Evaluation Of Flatbandsupporting
confidence: 74%
See 1 more Smart Citation
“…For instance, in the case of GaAs Brummer [13) has postulated a Volmer-Tafel mechanism whereas Gerischer [12) could interpret his results by a VolmerHeyrovsky mechanism. Difficulties arise because the surface may change from a hydroxide into a hydride surface leading to a change of the Helmholtz double layer, before the H 2-evolution occurs [10,11,16).…”
Section: Introductionmentioning
confidence: 99%
“…The latter result has not been much further investigated. Hrevolution has been studied at several semiconductor electrodes such as germanium [10,11], GaAs [12,13], InP…”
mentioning
confidence: 99%