(Ren TL)) spotlight due to its excellent room-temperature carrier mobility and layer-dependent direct band gap, which can be tuned from 0.3 to 2 eV as its thickness decreases from bulk to monolayer [5−8]. Therefore, o-BP is prized in bridging the gap between graphene and TMDCs. Accordingly, phosphorene, which is designated as a monolayer or a few layers of o-BP, has recently emerged as a new promising member of the 2D material family. Based on its intriguing properties, a plethora of exciting potential applications of monolayer or multilayer phosphorene have been reported, such as field-effect transistors (FETs) [5,9−13] [27,28]. Specifically, much interest has been focused on FETs based on multilayer phosphorene, stemming from its fascinating electrical properties. These FETs devices show the appreciable hole mobility (μ p ) in the order of 10 to 10 3 cm 2 V −1 s −1 and the on/off current switching ratio (I on /I off ) of 10 2 to 10 4 [5,9−13]. The theoretically predicted μ p for the monolayer or multilayer phosphorene at room temperature is infrequently high (10,000−26,000 cm 2 V −1 s −1 ) [9,11], and the I on /I off is remarkable large (exceeding 10 5 ) [5,9]. The implementation of monolayer or multilayer phosphorene can be attained by several classical methods including bottom-up processes, solution-based approaches [26,29−32], top-down methods [5,9−13]. Among these, although the bottom-up direct synthesis of large-area monolayer or multilayer phosphorene is the most promising way, by its reality, it has not yet been realized. The solution-based approaches have serious negative influences on both quality and purity of monolayer or multilayer phosphorene. The top-down methods are explored to achieve monolayer or multilayer phosphorene