2021
DOI: 10.21203/rs.3.rs-364552/v1
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Ubiquitous Organic Molecule-based Free-standing Nanowires with Ultra-high Aspect Ratios

Abstract: The critical dimension of semiconductor devices is approaching the single-nm regime, and a variety of practical devices of this scale are targeted for production this decade. Planar structures of nano-devices are still the center of fabrication techniques, which limit further integration of devices into a chip. Extension into 3D space is a promising strategy for future device integration; however, the steep increase in the number of surfaces and their interaction in 3D nanospace make it hard to integrate nanos… Show more

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“…Structural controlled semiconductors are an accessible and practical method to improve their THz emission performance. For example, nanowires (NWs) have shown electrical and optical properties due to their unique onedimensional structure [18][19][20]. As a THz emission material, semiconductor NWs have attracted great research attention because their low dimensional structure and large surface-tovolume ratio can break through the total-internal reflection limitation of the THz radiation generated by dipole radiation in bulk materials [21,22], thus increasing the THz emission efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…Structural controlled semiconductors are an accessible and practical method to improve their THz emission performance. For example, nanowires (NWs) have shown electrical and optical properties due to their unique onedimensional structure [18][19][20]. As a THz emission material, semiconductor NWs have attracted great research attention because their low dimensional structure and large surface-tovolume ratio can break through the total-internal reflection limitation of the THz radiation generated by dipole radiation in bulk materials [21,22], thus increasing the THz emission efficiency.…”
Section: Introductionmentioning
confidence: 99%