Ubiquitous relaxation in BTI stressing—New evaluation and insights

Kaczer, B.; Grasser, T.; Roussel, Philippe; Martín-Martínez, J.; O’Connor, Robert; O’Sullivan, B. J.; Groeseneken, G.

doi:10.1109/relphy.2008.4558858

Cited by 214 publications

(121 citation statements)

References 27 publications

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“…It is not possible to obtain this information from the stress pulse because of the contribution of both parts: ΔNit and ΔNot. Quite remarkably, the data can be fit by a quadratic polynomial, consistent with our NBTI experiments where we also observe a quadratic (E 2 ox ) dependence of the hole-trapping component [16][17][18]. The hole-trapping theory developed in [16] was applied to our data and excellent agreement was obtained.…”

Section: Extrapolation Of Oxide Trap Contributionsupporting

confidence: 84%

Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique

Hehenberger

Aichinger²,

Grasser

et al. 2009

2009 IEEE International Reliability Physics Symposium

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Abstract-Data obtained by the recently developed on-the-fly chargepumping technique has suggested a fast initial degradation and recovery of interface states during negative and/or bias temperature stress, contrary to previously published results. By revising the analysis of the measurement setup, fast interface state creation and recovery are revealed as artifact due to a different amount of oxide traps seen during the stress and relaxation phases. From this analysis we conclude that data gathered during stress and recovery phases must not be directly compared. By properly taking the contribution of (slow) oxide charges into account, which leads to a spurious increase of the charge-pumping current during the stress phase, we demonstrate that no fast initial degradation and no fast recovery of interface states occurs. Nevertheless, the charge-pumping signal is sensitive to the continuous switching of the gate voltage into accumulation, which also accelerates interface state recovery, albeit at a slower rate. We finally conclude that both the fast initial degradation and the fast initial recovery seem to be due to oxide charges. Therefore these oxide charges need to be considered. By performing simulations with our device simulator Minimos-NT using a modified Shockley-ReadHall model it was possible to reproduce the effect of these oxide charges. For this purpose a temperature and field activated tunneling process is assumed and results in proper agreement of measurement and simulation. A correction scheme for the on-the-fly charge-pumping measurement technique is then presented.

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Section: Extrapolation Of Oxide Trap Contributionsupporting

confidence: 84%

Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique

Hehenberger

Aichinger²,

Grasser

et al. 2009

2009 IEEE International Reliability Physics Symposium

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“…While all studies report a duty-factor dependence following the ubiquitous step-shaped curve [1,2,[5][6][7][8], the frequency dependence of BTI appears to be controversial: particularly older studies using slow measurements report frequency independent behavior [1,9,10], while more recent studies have revealed a frequency dependent contribution [3,[11][12][13][14][15][16][17][18][19][20]. We study the duty-factor and frequency dependence in the light of the recently proposed capture/emission time (CET) map model [7,[21][22][23] and demonstrate that the recoverable component of BTI can only to the first-order be captured by a two-state defect model.…”

Section: Introductionmentioning

confidence: 99%

On the frequency dependence of the bias temperature instability

Kaczer

Reisinger

Wagner

et al. 2012

2012 IEEE International Reliability Physics Symposium (IRPS)

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Abstract-An accurate understanding of the duty-factor and frequency dependence of the bias temperature instability (BTI) is essential since it can transfer to significant lifetime benefits. Contradictory reports regarding the frequency dependence have been published in literature, with particularly older studies and those interpreted in the framework of the reaction-diffusion model claiming BTI to be frequency-independent. Newer studies, on the other hand, clearly show a frequency-dependent component of BTI. Here we discuss this frequency dependence using the recently suggested capture/emission time map model, which explains BTI as a collection of a large number of independent first-order reactions of defects with two states. While this model can explain most features observed in DC and low-frequency AC stress experiments, it does not fully capture the experimentally observed frequency and duty-factor dependence. However, when a more accurate defect model is considered, which describes charging of the defect via an intermediate state, good accuracy with experimental data is obtained.

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“…Furthermore, the estimation of the NBTI time exponent was observed to strongly depend on the measurement delay ( Fig. 2.14) [7]. A range of several NBTI time exponents between *0.1 and *0.25 has been reported in the literature, possibly due to different measurement techniques.…”

Section: Nbti Relaxationmentioning

confidence: 83%

“…Once the stress is removed or diminished, the induced DV th is observed to partially recover ( Fig. 2.13) [7].…”

Section: Nbti Relaxationmentioning

confidence: 99%

“…3. Figure 2.15 reports a set of relaxation transients recorded after NBTI stress periods of increasing duration with one such technique (i.e., the extended Measure-Stress-Measure technique, or eMSM [7]). It is worth noticing already that the NBTI relaxation is observed to proceed with a log(t) trend over a wide range of timescales (see, e.g., the extended relaxation transients covering *7 decades in time in Fig.…”

Section: Nbti Relaxationmentioning

confidence: 99%

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Degradation Mechanisms

Franco

Kaczer

Groeseneken

2013

Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

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In this chapter, a general description of the main MOSFET degradation mechanisms considered in this work is given. The proposed dissertation, while not aiming to give a complete coverage of the wide literature available on the treated topics, is meant to provide the reader with a sufficient basis to follow the discussion of the original experimental work presented in the following chapters.Most of the chapter is devoted to the Negative Bias Temperature Instability (NBTI) since this degradation mechanism pertains to most of the original experimental work on SiGe and Ge channel devices presented later in the Chaps. 4 Recent modeling attempts are focused on the central role of hole trapping mechanisms in NBTI degradation. However, the standard Shockley-Read-Hall models for carrier generation-recombination have been proven to be incapable of correctly capturing the properties of hole trapping into bulk oxide defects (Sect. 2.2.7). A physically more accurate description of the trapping mechanism, including vibrational motion of the atoms at the defect sites, is needed for reproducing the observed trapping behavior (Sect. 2.2.8). Based on these insights, a defect model compatible with a wide range of NBTI degradation observations J. Franco et al., Reliability of High Mobility SiGe Channel MOSFETs for Future

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Ubiquitous relaxation in BTI stressing—New evaluation and insights

Cited by 214 publications

References 27 publications

Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique

Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique

On the frequency dependence of the bias temperature instability

Degradation Mechanisms

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