2022
DOI: 10.1364/oe.451509
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Ultra-bright green InGaN micro-LEDs with brightness over 10M nits

Abstract: An investigation of electrical and optical properties of InGaN micro-scale light-emitting diodes (micro-LEDs) emitting at ∼530 nm is carried out, with sizes of 80, 150, and 200 µm. The ITO as a current spreading layer (CSL) provides excellent device performance. Over 10% external quantum efficiency (EQE) and wall-plug efficiency (WPE), and ultra-high brightness (> 10M nits) green micro-LEDs are realized. In addition, it is observed that better current spreading in smaller devices results in higher EQE and b… Show more

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Cited by 23 publications
(16 citation statements)
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“…As illustrated in Figure b, the R region of region 2 is higher than that of region 1 when the current ranges from 10 to 3000 μA. As illustrated in Figure c, the peak energy of region 1 is obviously higher than that of region 2, indicating that the minimum energy of the local potential in region 1 is higher than those in the inner region of mesa, which is mainly attributed to the reduction of band bending and polarization originating from the strain relaxation at the edge of mesa. , …”
Section: Resultsmentioning
confidence: 88%
See 1 more Smart Citation
“…As illustrated in Figure b, the R region of region 2 is higher than that of region 1 when the current ranges from 10 to 3000 μA. As illustrated in Figure c, the peak energy of region 1 is obviously higher than that of region 2, indicating that the minimum energy of the local potential in region 1 is higher than those in the inner region of mesa, which is mainly attributed to the reduction of band bending and polarization originating from the strain relaxation at the edge of mesa. , …”
Section: Resultsmentioning
confidence: 88%
“…As illustrated in Figure 9c, the peak energy of region 1 is obviously higher than that of region 2, indicating that the minimum energy of the local potential in region 1 is higher than those in the inner region of mesa, which is mainly attributed to the reduction of band bending and polarization originating from the strain relaxation at the edge of mesa. 33,34 The separation between peak energies among selected regions decreases with increasing current due to the bandfilling effect. Nevertheless, as shown in Figure 9d, the FWHM of region 2 is larger than that of region 1.…”
Section: Acs Photonicsmentioning
confidence: 99%
“…We measured peak external quantum efficiency (EQE) of our uLEDs to be ∼7% by placing a 70mm 2 photodiode (Thorlabs S120VC) against the sapphire substrate and measuring the bottom-emitted output power (Figure 1g). Since GaN-based µLED efficiency has been reported as high as 15% EQE for comparable µLEDs 47, 64 , additional process development is likely to yield further improvements in efficiency.…”
Section: Resultsmentioning
confidence: 99%
“…For μLEDs, its EQE decreases as the mesa size decreases due to sidewall defects and surface recombination. Even if we assume that all the produced light from μLEDs can be coupled into the AR/VR imaging system, in comparison with blue 25,26 and green InGaN μLEDs 25,[27][28][29] in which EQE is size dependent, our blue nanowire LED still has a higher EQE than μLED whose mesa size is smaller than 10 μm as shown in Figure 7. The advantage of nanowire is pronounced for green light emission and the effective LEE of green nanowire LEDs is even higher than that of 80-μm μLED.…”
Section: Performancementioning
confidence: 99%