Ultra-broadband graphene-InSb heterojunction photodetector

Xu, Jingxian; Hu, Junfei; Wang, Rubing; Li, Qi; Li, Weiwei; Guo, Yikun; Liu, Fengkui; Ullah, Zaka; Wen, Long; Liu, Liwei

doi:10.1063/1.4997327

Cited by 38 publications

(14 citation statements)

References 32 publications

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“…To further prove the superiority of the vdWs‐on‐MCT photodetector, the room‐temperature blackbody detectivity of the vdWs‐on‐MCT photodetector as a function of the wavelength is compared with the commercial photodetector and the two‐dimensional BP‐based photodetectors in Figure 4d and Table 1 . [ 19,34,36,37,41 ] The blackbody detectivity of the vdWs‐on‐MCT photodetector is comparable to that of the most advanced commercial photodetectors, which is higher than that of photodetectors based on 2D materials and commercial photodetectors in the 3.8–4.8 µm MWIR region.…”

Section: Resultsmentioning

confidence: 95%

“…To further verify the improvement in the response time after the introduction of multilayer graphene, we compared the vdWs-on-MCT photodetector with other structures and commercial MWIR photodetectors (Figure 3d). [30][31][32][33][34][35][36][37] The proposed vdWs-on-MCT photodetector exhibits the highest responsivity (3 A W -1 ) and fastest response time (13 ns), compared to the PV model based on narrow-band 2D materials and the commercial MWIR photodetectors at 300 K. The response time is almost an order of magnitude faster than that of the current commercial room temperature MCT heterojunction photodetectors. This is mainly due to a combination of the fewer defects in MCT and the high mobility of graphene.…”

Section: Fast Photovoltaic Response Of the Vdws-on-mct Photodetectormentioning

confidence: 99%

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Fast Uncooled Mid‐Wavelength Infrared Photodetectors with Heterostructures of van der Waals on Epitaxial HgCdTe

Wang

Cui

et al. 2021

Advanced Materials

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Uncooled infrared photodetectors have evoked widespread interest in basic research and military manufacturing because of their low‐cost, compact detection systems. However, existing uncooled infrared photodetectors utilize the photothermoelectric effect of infrared radiation operating at 8–12 µm, with a slow response time in the millisecond range. Hence, the exploration of new uncooled mid‐wavelength infrared (MWIR) heterostructures is conducive to the development of ultrafast and high‐performance nano‐optoelectronics. This study explores a van der Waals heterojunction on epitaxial HgCdTe (vdWs‐on‐MCT) as an uncooled MWIR photodetector, which achieves fast response as well as high detectivity for spectral blackbody detection. Specifically, the vdWs‐on‐MCT photodetector has a fast response time of 13 ns (77 MHz), which is approximately an order of magnitude faster than commercial uncooled MCT photovoltaic photodetectors. Importantly, the device exhibits a photoresponsivity of 2.5 A W‐1, quantum efficiency as high as 85%, peak detectivity of 2 × 1010 cm Hz1/2 W‐1 under blackbody radiation at room temperature, and peak detectivity of up to 1011 cm Hz1/2 W‐1 at 77 K. Thereby, this work facilitates the effective design of high‐speed and high‐performance heterojunction uncooled MWIR photodetectors.

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Section: Resultsmentioning

confidence: 95%

Section: Fast Photovoltaic Response Of the Vdws-on-mct Photodetectormentioning

confidence: 99%

Fast Uncooled Mid‐Wavelength Infrared Photodetectors with Heterostructures of van der Waals on Epitaxial HgCdTe

Wang

Cui

et al. 2021

Advanced Materials

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“…High‐performance mid‐infrared (MIR) photodetectors with the ability to realize photodetection in the infrared waveband of 2.5–25 µm at room temperature are of paramount importance in optical radar, night vision, military surveillance, and water‐quality inspection applications. [ 1–3 ] The state‐of‐the‐art infrared photodetectors, especially those working in MIR regimes, are fabricated using HgCdTe alloys, [ 4 ] InSb, [ 5 ] and quantum‐wells, [ 6 ] which inevitably suffer from strict operation demands, high‐cost, and environmental toxicity, thus limiting their widespread usage. [ 7 ] Alternatively, two‐dimensional (2D) materials have been emerging as ideal candidates for MIR photodetection due to their unique optoelectronic properties and easy integrability.…”

Section: Figurementioning

confidence: 99%

Van der Waals Epitaxial Growth of Mosaic‐Like 2D Platinum Ditelluride Layers for Room‐Temperature Mid‐Infrared Photodetection up to 10.6 µm

et al. 2020

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in optical radar, night vision, military surveillance, and water-quality inspection applications. [1-3] The state-of-theart infrared photodetectors, especially those working in MIR regimes, are fabricated using HgCdTe alloys, [4] InSb, [5] and quantum-wells, [6] which inevitably suffer from strict operation demands, high-cost, and environmental toxicity, thus limiting their widespread usage. [7] Alternatively, two-dimensional (2D) materials have been emerging as ideal candidates for MIR photodetection due to their unique optoelectronic properties and easy integrability. [8] One of the key advantageous features is that the out-of-plane van der Waals (vdW) interaction between layered structures without surface dangling bonds can effectively lower noise from generation-recombination by using the layered materials as main absorbers in MIR regions. [9] For instance, semi-metallic graphene with the ability to absorb light from visible to terahertz enables the design of novel graphene photonic devices that can operate well in mid-wave infrared (MWIR, 3-5 µm), and even in long-wave infrared (LWIR, 8-14 µm) spectral ranges. [10] Unfortunately, the low optical absorption and gapless nature of graphene result in the poor photoresponsivity and large dark current. [11] Although a number of alternative approaches such as integrating quantum dots (QDs), [12] introducing defective states, [13] effective surface doping, [14] and patterning nanoribbon arrays, [15] have been intensively employed to enhance the device performance, they are mainly dominated by uncontrolled processing techniques with time-consuming and complex fabrication procedures. [8] A lately rediscovered black phosphorus (BP) with a large bandgap tunability is widely used for the fabrication of high-sensitivity MIR photodetectors, but its poor air stability leads to the degradation of device performance. Meanwhile, both theoretical and experimental analyses reveal a short cutoff wavelength of ≈3.7 µm for BP-based photodetectors due to its bulk bandgap of ≈0.3 eV, which is far below the second atmospheric window of LWIR photodetection. [16] The existing dilemma stimulates the research community to explore a promising alternative with wide absorption, high air stability, and considerable carrier mobility toward longer-wavelength MIR photodetection. Mid-infrared (MIR) photodetection, covering diverse molecular vibrational regions and atmospheric transmission windows, is vital to civil and military purposes. Versatile use of MIR photodetectors is commonly dominated by HgCdTe alloys, InSb, and quantum superlattices, which are limited by strict operation demands, high-cost, and environmental toxicity. Despite the rapid advances of black phosphorus (BP)-based MIR photodetectors, these are subject to poor stability and large-area integration difficulty. Here, the van der Waals (vdW) epitaxial growth of a wafer-scale 2D platinum ditelluride (PtTe 2) layer is reported via a simple tellurium-vapor transformation approach. The 2D PtTe 2 layer possesses a unique mosaic-like c...

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“…High-frequency light illumination (pulsed 1550 nm laser, 1 kHz), which is realized by using an oscilloscope, is further utilized to study the photoresponse of the photodetector. As shown in Figure c, the photodetector can exactly trace the fast pulsed light illumination, with the rise time ( t r ) and fall time ( t f ) of about 50 and 53 μs, respectively (Figure d), which is faster than the photodetectors fabricated by graphene with single-type of dopant atoms. − It is estimated that this ultrafast response is ascribed to the synergism of N and P codoped of graphene with unique electron distribution and structural distortions. , In comparison with photodetector fabricated by n-type graphene, the photodetector fabricated with n-type GQDs exhibits an obviously degraded photocurrent due to the poor quality of the film formed by spinning coated n-type GQDs (Supporting Information Figures S5). Moreover, the reproducibility of photodetector device performance has been tested from multiple devices, as summarized in Supporting Information Figures S6.…”

Section: Resultsmentioning

confidence: 92%

Graphene Quantum Dots Promoted the Synthesis of Heavily n-Type Graphene for Near-Infrared Photodetectors

Zhu

Zhao

et al. 2019

J. Phys. Chem. C

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The application of graphene in the field of microelectronics is becoming more and more urgent with the emergence of bottlenecks in semitechnical development, in which controllable graphene doping technology, therefore, strongly demanded to tune the electronic or optoelectronic properties for the fabrication of high-performance devices. We herein report a simple and convenient approach to synthesize heavily nitrogen (N) and phosphorus (P) codoped graphene (n-type graphene) by chemical vapor deposition (CVD), which is realized by utilizing N and P codoped graphene quantum dots (n-type GQDs) as nucleation centers, methane (CH 4 ) as the gaseous carbon reservoir, and copper (Cu) foils as the catalyst substrate. By the monitoring of the growth mechanism of the graphene, and an investigation revealed that codoped GQDs could serve as the nucleation sites for producing doped-graphene films through two-dimensional epitaxial growth. Finally, the photodetector built on the heavily n-type graphene film is confirmed to perform satisfactorily, accompanying high detectivity (∼1.3 × 10 10 cm Hz 1/2 W −1 ) and responsivity (58 mAW −1 ), at a wavelength of 1550 nm. A simple and environmentally friendly graphene doping technology has been developed, which promotes the application of doped graphene in the field of microelectronics.

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Ultra-broadband graphene-InSb heterojunction photodetector

Cited by 38 publications

References 32 publications

Fast Uncooled Mid‐Wavelength Infrared Photodetectors with Heterostructures of van der Waals on Epitaxial HgCdTe

Fast Uncooled Mid‐Wavelength Infrared Photodetectors with Heterostructures of van der Waals on Epitaxial HgCdTe

Van der Waals Epitaxial Growth of Mosaic‐Like 2D Platinum Ditelluride Layers for Room‐Temperature Mid‐Infrared Photodetection up to 10.6 µm

Graphene Quantum Dots Promoted the Synthesis of Heavily n-Type Graphene for Near-Infrared Photodetectors

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