Ultra-broadband infrared luminescence of Bi-doped thin-films for integrated optics

Abstract

Ultra-broadband infrared luminescence has been observed in bismuth (Bi)-doped germanate thin-films prepared by pulsed laser deposition. The films are compatible with various types of substrates, including conventional dielectrics (LaAlO 3 , silica) and semiconductors (Si, GaAs). The emission peak position of the films can be finely tuned by changing oxygen partial pressure during the deposition, while the excitation wavelength locates from ultra-violet to near-infrared regions. The physical mechanism behind the observed infrared luminescence of the Bi-doped films, differing from that of the as-made glass, is discussed. ©2013 Optical Society of America

Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures

“…A similar NIR PL emission was recently reported for bismuth-based different host materials, such as glasses, oxides, crystals, thin films, zeolites, and others [ 22 , 23 , 35 , 36 , 37 , 38 , 39 , 40 , 41 ]. To our best knowledge, this is the first observation of NIR luminescence from Bi-coated SiNWs.…”

“…Different kinds of Bi centers, including Bi 0 , Bi + , Bi 2+ , Bi 3+ , and Bi clusters [ 22 , 37 , 38 , 39 , 40 , 41 ], may exist, resulting from when Bi melts during the evaporation process. However, based on earlier studies, only bismuth with low valence states (Bi 0 , Bi + ) or bismuth clusters originate the NIR emission, as they are the NIR-active Bi centers, regardless of the starting host material [ 36 , 37 , 38 , 39 , 40 , 41 ]. It is noteworthy that the spectral shapes and position of the maximum are identical for all the Bi@SiNWs samples.…”

A Soft Chemistry‐Based Route to Near‐Infrared Luminescent Bismuth‐Activated Glass Films

“…In spite of these tantalizing progresses, unfortunately, the development of waveguide‐type broadband optical amplifiers that can be integrated on an array of optoelectronic devices greatly lags behind, owing to limited techniques available that can be applied to the fabrication of Bi‐activated films. At present, the preparation of Bi‐activated films commonly relies on the physical vapor deposition (PVD) technique including cosputtering and pulse laser deposition (PLD) . Such conventional methods consist of the preparation of targets, exploring various preparation parameters using expensive experimental apparatuses, and in situ or postthermal treatment of the as‐prepared films.…”

“…Such conventional methods consist of the preparation of targets, exploring various preparation parameters using expensive experimental apparatuses, and in situ or postthermal treatment of the as‐prepared films. Therefore, determining the optimal conditions required for the activation of Bi‐related active centers (BRACs) in a desired matrix with high control over the composition becomes not only a challenging and tedious task but also a nearly impossible task for complex multicomponent stoichiometries, which inevitably leads to a large difference in the PL features between the designed and prepared films . In short, the fabrication of NIR luminescent bismuth‐activated glass films still remains a challenging subject of continuous research effort.…”

“…At present, the preparation of Bi-activated films commonly relies on the physical vapor deposition (PVD) technique including cosputtering and pulse laser deposition (PLD). [33][34][35][36][37][38] Such conventional methods consist of the preparation of targets, exploring various preparation parameters using expensive experimental apparatuses, and in situ or postthermal treatment of the as-prepared films. Therefore, determining the optimal conditions required for the activation of Bi-related active centers (BRACs) in a desired matrix with high control over the composition becomes not only a challenging and tedious task but also a nearly impossible task for complex multicomponent stoichiometries, which inevitably leads to a large difference in the PL features between the designed and prepared films.…”