Ultra compact and high reliable SiC MOSFET power module with 200&amp;#x00B0;C operating capability

Horio, Masafumi; Iizuka, Yuji; Ikeda, Yoshinari; Mochizuki, Etsuko; Takahashi, Yoshikazu

doi:10.1109/ispsd.2012.6229028

Cited by 32 publications

(11 citation statements)

References 9 publications

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“…This means that in order to achieve high current ratings, several chips have to be connected in parallel, either as separate components or in a multi-chip module. Several attempts to achieve this have already been presented [1], [2]. However, many details regarding these issues are still uncertain, especially issues regarding transient mismatches.…”

Section: Introductionmentioning

confidence: 99%

Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs

Sadik

Colmenares

Peftitsis

et al. 2013

2013 15th European Conference on Power Electronics and Applications (EPE)

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An Experimental performance analysis of a parallel connection of two 1200/80 mΩ silicon carbide SiC MOSFETs is presented. Static parallel connection was found to be unproblematic. The switching performance of several pairs of parallel-connected MOSFETs is shown employing a common simple totem-pole driver. Good transient current sharing and high-speed switching waveforms with small oscillations are presented. To conclude this analysis, a dc/dc boost converter using parallel-connected SiC MOSFETs is designed for stepping up a voltage from 50 V to 560 V. It has been found that at high frequencies, a mismatch in switching losses results in thermal unbalance between the devices.

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Section: Introductionmentioning

confidence: 99%

Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs

Sadik

Colmenares

Peftitsis

et al. 2013

2013 15th European Conference on Power Electronics and Applications (EPE)

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“…Although this is a low power module using Si devices, the benefits directly transfer to modules in the higher power range-especially since the voltage and current slew rates encountered will be more severe as the power levels rise. In 2011, Fuji Electric [56] proposed the use of copper pins to connect to the device bond pads instead of wire bonds (Figure 12). The copper pins fit into the through-hole connections on the power circuit board.…”

Section: D Integration Effortsmentioning

confidence: 99%

“…A fin heat sink was used for heat removal. In 2011, Fuji Electric [56] proposed the use of copper pins to connect to the device bond pads instead of wire bonds (Figure 12). The copper pins fit into the through-hole connections on the power circuit board.…”

Section: D Integration Effortsmentioning

confidence: 99%

High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

Seal

Mantooth

2017

Energies

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This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered these advancements, the major technology barriers preventing SiC power devices from performing to their fullest ability were identified. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire bondless SiC power modules were described, and the concept for a novel SiC power module was discussed.

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“…On the other hand these solutions are not always compatible with current PE system solutions, they are not supported by existing production lines and their reliability, power scaling capability and operating temperature capability are often not clear. An interesting high-power density module concept based on replacement of bond-wire interconnections by power board was presented by Horio et al [8]. A high-performance halfbridge module assembled by conventional packaging technologies was presented in [9], where the authors have optimized the module performance by placing semiconductor devices in parallel lines (strip line concept).…”

Section: Introductionmentioning

confidence: 99%

Full SiC half-bridge module for high frequency and high temperature operation

Kicin

Pettersson

Bianda

et al. 2015

2015 IEEE 65th Electronic Components and Technology Conference (ECTC)

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An innovative power electronics half-bridge module concept exploiting 3D-design features was proposed to achieve low stray inductance and balanced current sharing, and thus module fast switching capability. In order to verify the switching performance of the concept, a 1.2 kV / 100 A full SiC module was designed using electromagnetic simulations and fabricated exploiting state-of-the-art but still conventional packaging technologies. Afterwards the module was tested and benchmarked to commercially available SiC modules. Performed tests confirmed fast switching capability of the proposed concept and showed more than 20 % lower switching losses compared to the benchmarked commercial modules.978-1-4799-8609-5/15/$31.00 ©2015 IEEE

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Ultra compact and high reliable SiC MOSFET power module with 200°C operating capability

Cited by 32 publications

References 9 publications

Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs

Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs

High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

Full SiC half-bridge module for high frequency and high temperature operation

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