Ultra-compact optical filters in Silicon-on-Insulator and their Applications

Bogaerts, Wim; Dumon, Pieter; Brouckaert, Joost; Vos, Katrien De; Taillaert, Dirk; Thourhout, Dries Van; Baets, Roel

doi:10.1109/group4.2007.4347647

Cited by 8 publications

(3 citation statements)

References 10 publications

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“…In SOI, the index contrast between Si (n&3.5) to SiO 2 (n&1.5) is that high (Fig. 4) (Δn/n&65%) that submicron waveguides are possible [3,4].…”

Section: Soi Waveguidesmentioning

confidence: 99%

Prospects and challenges of silicon/germanium on-chip optoelectronics

Kasper

2010

Front. Optoelectron. China

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On-chip optoelectronics allows the integration of optoelectronic functions with microelectronics. Recent advances in silicon substrate fabrication (silicon-oninsulator (SOI)) and in heterostructure engineering (SiGe/Si) push this field to compact (chipsize) waveguide systems with high-speed response (50-GHz subsystems realized, potential with above 100 GHz). In this paper, the application and requirements, the future solutions, the components and the physical effects are discussed.A very high refractive index contrast of the waveguide Si-core/SiO 2 -cladding is responsible for the submicron line widths and strong bendings realized in chipsize waveguide lines and passive devices. The SiGe/Si heterostructure shifts the accessible wavelength into infrared up to telecommunication wavelengths 1.30-1.55 µm. Germanium, although also an indirect semiconductor as silicon, offers direct optical transitions which are only 140 meV above the dominant indirect one. This is the basic property for realizing high-speed devices for future above 10 GHz on-chip clocks and, eventually, a laser source monolithically integrated on the Si substrate.

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“…In SOI, the index contrast between Si (n&3.5) to SiO 2 (n&1.5) is that high (Fig. 4) (Δn/n&65%) that submicron waveguides are possible [3,4].…”

Section: Soi Waveguidesmentioning

confidence: 99%

Prospects and challenges of silicon/germanium on-chip optoelectronics

Kasper

2010

Front. Optoelectron. China

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“…These devices are applied to optical interconnections of chip-to-chip [1][2][3] and moreover to the inside of LSI chips. [4][5][6][7] There are several types of silicon photonic devices that utilize Si waveguides, [8][9][10][11] multiplexers=demultiplexers, [12][13][14] modulators, [15][16][17][18][19][20][21] wavelength filters 22,23) and so on. Among them, optical ring resonators are often used for modulators and wavelength filters, where resonance wavelengths are changed by some mechanisms: carrier-plasma effect, 24,25) thermo-optic (TO) effect, 26) quantum-confined Stark effect 27) and so on.…”

Section: Introductionmentioning

confidence: 99%

Design and characterization of MEMS optical devices using slot-ring resonator for low-voltage operation

Amemiya¹,

Noda²,

Sennichi³

et al. 2016

Jpn. J. Appl. Phys.

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To realize MEMS optical devices with low-voltage operation of less than 1 V, we have proposed a slot-ring resonator with a beam structure. The performance of the proposed device is investigated. From the simulation, a more than 10 dB extinction ratio is estimated at a low voltage of 0.5 V, when the slot waveguide width is 250 nm and the slot width is 50 nm. We succeeded in the fabrication of the proposed device structure, and improvement of the quality factor (from 6400 to 14000) is achieved by changing the lithography process. The modulating operation is confirmed but the extinction ratio is lower than the simulated value. There are several considerable reasons for this low extinction ratio, such as non-optimal carrier concentration in slot waveguides and nonparallel arrangement of slot waveguides and so on. Optimizing the fabrication processes will solve this, and the expected high performance will be achieved.

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“…Si wire waveguide technology [1][2][3][4][5][6][7][8][9][10][11] can reduce the size of optical waveguide circuits to a range compatible with most electronic IC circuits, enabling many applications that were once difficult to realize by other optical waveguides. In this report, we describe the design of a wavelength demultiplexer for bidirectional optical communication such as the optical network unit (ONU) 9) used for fiber-to-the-home applications.…”

Section: Introductionmentioning

confidence: 99%

Design of Polarization-Independent Si-Wire-Waveguide Wavelength Demultiplexer for Optical Network Unit

Okayama¹,

Kotani²,

Maeno³

et al. 2010

Jpn. J. Appl. Phys.

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We report the design of a compact wavelength demultiplexer using a Si wire waveguide as an optical network unit. We use a Mach–Zehnder lattice interferometeric filter structure to attain a flat-top response. The large wavelength dispersion of the Si wire waveguide requires special design considerations for widely separated wavelength channels. Preliminary experimental results obtained by the device fabricated in a silicon-on-insulator wafer showed a flat-top filter response.

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Ultra-compact optical filters in Silicon-on-Insulator and their Applications

Cited by 8 publications

References 10 publications

Prospects and challenges of silicon/germanium on-chip optoelectronics

Prospects and challenges of silicon/germanium on-chip optoelectronics

Design and characterization of MEMS optical devices using slot-ring resonator for low-voltage operation

Design of Polarization-Independent Si-Wire-Waveguide Wavelength Demultiplexer for Optical Network Unit

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