2023
DOI: 10.1038/s42005-023-01189-x
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Ultra-efficient generation of time-energy entangled photon pairs in an InGaP photonic crystal cavity

Abstract: The typical approaches to generate heralded single photons rely on parametric processes, with the advantage of generating highly entangled states at the price of a random pair emission. To overcome this limit, degenerate spontaneous Four-Wave-Mixing is a reliable technique which combines two pump photons into a pair of signal and idler photons via Kerr nonlinear optical effect. By exploiting the intrinsic small confinement volume and thermally tuning the resonances of a 20 μm-long Photonic Crystal cavity, we e… Show more

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Cited by 14 publications
(1 citation statement)
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“…Normalizing the PGR is normalized to the spectrum bandwidth of 173.32 MHz; the given spectral brightness is as high as 4.28 × 10 8 pairs s –1 mW –2 GHz –1 . This PGR value assisted by the high Q factor is comparable to the microcavity-based quantum sources in platforms such as SOI and InP with larger χ (3) but a relatively small Q factor, but more than 2 orders of magnitude lower than those with comparative Q factor in other platforms including AlGaAs with larger χ (3) , InGaP with smaller nonlinear volume, and LiNbO 3 using second-order nonlinearity (see Table S1 in Supporting Information for details). Moreover, the large bandgap ( E g = 2.39 eV) of the Ge 25 Sb 10 S 65 material prevents saturation phenomenon induced by two-photon absorption at the telecom band that is inevitably encountered in InP or SOI platforms with strong χ (3) nonlinearities. , …”
mentioning
confidence: 77%
“…Normalizing the PGR is normalized to the spectrum bandwidth of 173.32 MHz; the given spectral brightness is as high as 4.28 × 10 8 pairs s –1 mW –2 GHz –1 . This PGR value assisted by the high Q factor is comparable to the microcavity-based quantum sources in platforms such as SOI and InP with larger χ (3) but a relatively small Q factor, but more than 2 orders of magnitude lower than those with comparative Q factor in other platforms including AlGaAs with larger χ (3) , InGaP with smaller nonlinear volume, and LiNbO 3 using second-order nonlinearity (see Table S1 in Supporting Information for details). Moreover, the large bandgap ( E g = 2.39 eV) of the Ge 25 Sb 10 S 65 material prevents saturation phenomenon induced by two-photon absorption at the telecom band that is inevitably encountered in InP or SOI platforms with strong χ (3) nonlinearities. , …”
mentioning
confidence: 77%