Ultra-fast switching of infrared radiation by laser-produced carriers in semiconductors

Alcock, A. J.; Corkum, P. B.

doi:10.1139/p79-176

Cited by 75 publications

(32 citation statements)

References 1 publication

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“…In this paper we demonstrate that these two requirements for the FEL pulses can be fulfilled with the aid of a plasma mirror [4][5][6] . There are two new features in the present work.…”

mentioning

confidence: 99%

Damage threshold and focusability of mid-infrared free-electron laser pulses gated by a plasma mirror with nanosecond switching pulses

Wang

Nakajima

Zen

et al. 2013

Applied Physics Letters

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The presence of a pulse train structure of an oscillator-type free-electron laser (FEL) results in the immediate damage of a solid target upon focusing. We demonstrate that the laser-induced damage threshold can be significantly improved by gating the mid-infrared (MIR) FEL pulses with a plasma mirror. Although the switching pulses we employ have a nanosecond duration which does not guarantee the clean wavefront of the gated FEL pulses, the high focusablity is experimentally confirmed through the observation of spectral broadening by a factor of 2.1 when we tightly focus the gated FEL pulses onto the Ge plate.

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“…In this paper we demonstrate that these two requirements for the FEL pulses can be fulfilled with the aid of a plasma mirror [4][5][6] . There are two new features in the present work.…”

mentioning

confidence: 99%

Damage threshold and focusability of mid-infrared free-electron laser pulses gated by a plasma mirror with nanosecond switching pulses

Wang

Nakajima

Zen

et al. 2013

Applied Physics Letters

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“…Here, the switching speed limits the duration of the resulting pulse. Two techniques often employed for this purpose are a semiconductor optical switch (Alcock & Corkum, 1979), or a Kerr cell (Filip et al, 2002). Both rely on an ultrashort pulse of another laser (usually a solid-state one) to trigger the switch by inducing a short-living "plasma mirror" in the case of a semiconductor switch, or birefringence in that of the Kerr cell.…”

Section: Pulse-slicing Techniquesmentioning

confidence: 99%

Ultrashort Pulses

Mikhail¹,

Babzie²

2012

CO2 Laser - Optimisation and Application

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“…31 The technique has been applied since the 1970s, and was ͑among others͒ used for short-pulse production of CO 2 laser pulses. 32,33 The principle of SCS is that a pump beam excites a dense electron-hole plasma ͑free carriers͒ at the surface of a semiconductor.…”

Section: Experiment: Semiconductor Switching a Configuration Anmentioning

confidence: 99%

“…At such high densities, the acceleration scheme is referred to as the self-modulated LWFA ͑SM-LWFA͒, since the laser pulse length is longer than the plasma wavelength ͑which results in a laser envelope modulation at the plasma wavelength͒. Section III presents the first measurement technique, semiconductor switching ͑SCS͒, [31][32][33] where the NIR pulse serves as a pump and the THz pulse as a probe beam. SCS is suitable for THz enve- lope characterization as well as establishment of THz-to-NIR synchronization.…”

Section: Introductionmentioning

confidence: 99%

Terahertz Radiation as a Bunch Diagnostic for Laser-Wakefield-Accelerated Electron Bunches

Tilborg

Schroeder

Tóth

et al. 2006

AIP Conference Proceedings

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Experimental results are reported from two measurement techniques ͑semiconductor switching and electro-optic sampling͒ that allow temporal characterization of electron bunches produced by a laser-driven plasma-based accelerator. As femtosecond electron bunches exit the plasma-vacuum interface, coherent transition radiation ͑at THz frequencies͒ is emitted. Measuring the properties of this radiation allows characterization of the electron bunches. Theoretical work on the emission mechanism is presented, including a model that calculates the THz wave form from a given bunch profile. It is found that the spectrum of the THz pulse is coherent up to the 200 m thick crystal ͑ZnTe͒ detection limit of 4 THz, which corresponds to the production of sub-50 fs ͑rms͒ electron bunch structure. The measurements demonstrate both the shot-to-shot stability of bunch parameters that are critical to THz emission ͑such as total charge and bunch length͒, as well as femtosecond synchronization among bunch, THz pulse, and laser beam.

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Ultra-fast switching of infrared radiation by laser-produced carriers in semiconductors

Cited by 75 publications

References 1 publication

Damage threshold and focusability of mid-infrared free-electron laser pulses gated by a plasma mirror with nanosecond switching pulses

Damage threshold and focusability of mid-infrared free-electron laser pulses gated by a plasma mirror with nanosecond switching pulses

Ultrashort Pulses

Terahertz Radiation as a Bunch Diagnostic for Laser-Wakefield-Accelerated Electron Bunches

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