The conventional approach to perform two-qubit gate operations in trapped ions relies on exciting the ions on motional sidebands with laser light, which is an inherently slow process. One way to implement a fast entangling gate protocol requires a suitable pulsed laser to increase the gate speed by orders of magnitude. However, the realization of such a fast entangling gate operation presents a big technical challenge, as such the required laser source is not available off-the-shelf. For this, we have engineered an ultrafast entangling gate source based on a frequency comb. The laser generates bursts of several hundred mode-locked pulses with pulse energy ∼800 pJ at 5 GHz repetition rate at 393.3 nm and complies with all requirements for implementing a fast two-qubit gate operation. To verify the applicability and projected performance we run simulations based on our source parameters. The gate time can be faster than a trap period with an error approaching 10 −4 .