2017
DOI: 10.1088/2053-1591/aa6460
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Ultra-hard amorphous AlMgB14films RF sputtered onto curved substrates

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Cited by 4 publications
(7 citation statements)
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“…5 show the measured hardness of the films have an almost constant value for temperature 25 which results in more stable temperature and denser microstructure during sputtering at 350 °C temperature. Hardness and Young's modulus values are comparable to other reports about AlMgB 14 as hard coating material [5,11,14].…”
Section: Resultssupporting
confidence: 87%
See 1 more Smart Citation
“…5 show the measured hardness of the films have an almost constant value for temperature 25 which results in more stable temperature and denser microstructure during sputtering at 350 °C temperature. Hardness and Young's modulus values are comparable to other reports about AlMgB 14 as hard coating material [5,11,14].…”
Section: Resultssupporting
confidence: 87%
“…These dense B networks with unusual bonding generates interesting mechanical and transport properties. Hardness values range from 30 to 50 GPa [2,3], bulk moduli from 196 to 235 GPa [4][5][6] and melting points up to 2400 °C, underlining the exceptional bond strength of these B-networks [1]. The ternary boride AlMgB 14 is one of the promising boron-rich boride materials that can form icosahedral structures and has been investigated intensively during last years.…”
Section: Introductionmentioning
confidence: 99%
“…Ранее нами было показано, что на больших расстояниях меж-ду подложкой и стехиометрической мишенью d = 100−150 mm доля бора в получаемых пленках значительно снижалась [9,10]. Поэтому для изготовления стехиометрических покрытий расстояние мишень-подложка снижали вплоть до 15−25 mm, приближая образец вплотную к плазме RF-магнетронного разряда.…”
Section: вв путролайнен ам гришин ив ригоевunclassified
“…Наибольшую твердость (порядка 20 GPa) показало покрытие на образце № 2, полученное при мощности 100 W и ди-станции 15 mm. Данное покрытие также продемонстрировало наиболее высокие значения доли работы упругой деформации η = 87% и индекса пластичности H/E ≈ 0.18, что выше значений, полученных нами ранее на Si(100) [9,10]. На рис.…”
Section: вв путролайнен ам гришин ив ригоевunclassified
“…The next layer is grown at high RF target sputtering power. The affinity of the subsequent flow of sputtered atoms to an already evenly condensed template fosters the development of a smooth surface of a hard BAM film [15].…”
Section: Introductionmentioning
confidence: 99%