Ultra‐High and Fast Ultraviolet Response Photodetectors Based on Lateral Porous GaN/Ag Nanowires Composite Nanostructure

Li, Jing; Xi, Xin; Li, Xiaodong; Lin, Shan; Ma, Zhanhong; Xiu, Huixin; Zhao, Lixia

doi:10.1002/adom.201902162

Cited by 30 publications

(31 citation statements)

References 48 publications

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“…In particular, the emergency of nanopores in the photosensitive materials has been utilized to increase the optical absorption and enhance the photodetection performance. [29,30] The recrystallization and escape of oxygen species during the annealing process also lead to the shrinkage of film thickness as shown in Note S4, Supporting Information.…”

Section: Resultsmentioning

confidence: 99%

High‐Performance Harsh‐Environment‐Resistant GaO_X Solar‐Blind Photodetectors via Defect and Doping Engineering

et al. 2021

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photodetector (SBPD), as an indispensable part of spectral detectors, plays important roles distinctively in various crucial applications, such as missile tracking, flame prewarning, secure communication, and environment monitoring. [1][2][3][4] In terms of the possible harsh application environment, high-performance SBPDs with excellent tolerance towards high temperature, high voltage, and high radiation, are required inevitably. Based on low cost and mature technology, the currently available Si-based SBPDs are facing the challenges of filter dependence, low penetration depth of high-energy ultraviolet (UV) photons, and finite responsivity (R) towards solar-blind region. [5][6][7] Especially, Si-based SBPDs suffer serious thermal instability owing to the narrow bandgap, which suppresses their high-temperature applications. Advanced SBPDs based on wide bandgap (WBG) materials, such as MgZnO, [8] AlGaN, [9,10] diamond, [11] and Ga 2 O 3 , [12] are believed as subversive substitutes of Si-based SBPDs. Among the various WBG materials, Ga 2 O 3 is the most desirable candidate for SBPDs applications based on the facts that, i) its ultra-wide bandgap (4.5-4.9 eV) corresponds to the solar-blind region directly without the necessity of bandgap modulation by doping or alloying process; [13] ii) its high absorption coefficient for high-energy UV photons benefits outstanding sensitivity in solar-blind region; [14] iii) it balances high solar-bind response and material workability; [15] iv) its large-size bulk single crystals can be put into mass production by low-cost melt-grown methods; [16] and most importantly, v) it has high structural stability toward temperature, radiation, and electric field for harsh-environment application. [17] High-quality Ga 2 O 3 material, including single-crystal substrates, nanostructures, and epitaxial films, [14,18,19] facilitate sharp junction interface, such as P-N heterojunction, [20] N-N heterojunction, [21] phase junction, [22] and Schottky junction, [23] to improve the solar-blind response performance. Nevertheless, so far, high-performance SBPDs based on high-quality Ga 2 O 3 Gallium oxide (Ga 2 O 3 ), with an ultrawide bandgap, is currently regarded as one of the most promising materials for solar-blind photodetectors (SBPDs), which are greatly demanded in harsh environment, such as space exploration and flame prewarning. However, realization of high-performance SBPDs with high tolerance toward harsh environments based on low-cost Ga 2 O 3 material faces great challenges. Here, defect and doping (DD) engineering towards amorphous GaO X (a-GaO X ) has been proposed to obtain ultrasensitive SBPDs for harsh condition application. Serious oxygen deficiency and doping compensation of the engineered a-GaO X film ensure the high response currents and low dark currents, respectively. Annealing item in nitrogen of DD engineering also incurs the recrystallization of material, formation of nanopores by oxygen escape, and suppression of sub-bandgap defect states. As a result, the tailored GaO...

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Section: Resultsmentioning

confidence: 99%

High‐Performance Harsh‐Environment‐Resistant GaO_X Solar‐Blind Photodetectors via Defect and Doping Engineering

et al. 2021

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“…Moreover, as an ideal candidate for optoelectronic devices, GaN has been widely used in photodetectors and LEDs. [25][26][27][28] In this work, Ti 3 C 2 T X /(n/p)-GaN van der Waals heterostructures were fabricated and studied. Ultraviolet photoelectron spectroscopy (UPS) confirms that Ti 3 C 2 T X can form Schottky contacts with both n-GaN and p-GaN at room temperature.…”

mentioning

confidence: 99%

MXene‐GaN van der Waals Heterostructures for High‐Speed Self‐Driven Photodetectors and Light‐Emitting Diodes

Chen

Kang

et al. 2021

Adv Elect Materials

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lithium-ion batteries, [12,13] and electromagnetic interference shielding. [14,15] In addition to these above-mentioned applications, the excellent performance of MXenes makes them ideal for the research in MXene-semiconductor devices. [16] To be specific, MXenes colloidal solution can be fabricated into high-quality thin film through simple methods, such as drop casting and spin-coating, [17,18] thus simplifying the fabrication process of the devices. Besides, MXenes thin film possesses high transmittance and low sheet resistance, [19] which benefits their applications in photodetectors and LEDs. Moreover, the work function of MXene is adjustable in a large range from 2.14 to 5.65 eV, [20,21] which allows it to form Schottky junctions with different semiconductor materials, thereby broadening its application situations.So far, van der Waals heterostructures formed by other 2D materials (such as graphene and TMDs) and conventional semiconductor materials have been investigated widely in various fields and exhibits excellent characteristics. [22][23][24] However, van der Waals heterostructures fabricated by MXene and semiconductor materials have rarely been investigated so far and still need further study. Moreover, as an ideal candidate for optoelectronic devices, GaN has been widely used in photodetectors and LEDs. [25][26][27][28] In this work, Ti 3 C 2 T X /(n/p)-GaN van der Waals heterostructures were fabricated and studied. Ultraviolet photoelectron spectroscopy (UPS) confirms that Ti 3 C 2 T X can form Schottky contacts with both n-GaN and p-GaN at room temperature. By taking the advantages of the Ti 3 C 2 T X /(n/p)-GaN Schottky junctions, we fabricated high-speed photodetectors and stable orange LEDs, respectively. Under the illumination of a 365 nm light source with an intensity of 96.9 µW cm −2 , the Ti 3 C 2 T X /n-GaN photodetector shows a short rise time (60 ms) and decay time (20 ms), a high responsivity (44.3 mA W −1 ) and on/off ratio (≈11 300). And the Ti 3 C 2 T X /p-GaN LED device remains stable orange light emission under bias voltage from 4 to 22 V. We believe that this work gives an essential strategy for photodetectors and LEDs by taking the advantages of MXenes. Due to their excellent electrical conductivity, high transmittance, and adjustable work function, 2D transition-metal carbides and nitrides have shown great promise in optoelectronic applications, especially in MXenesemiconductor devices. In this work, Ti 3 C 2 T X /(n/p)-GaN van der Waals heterostructures are fabricated and studied. The Ti 3 C 2 T X /(n/p)-GaN Schottky junctions are confirmed by ultraviolet photoelectron spectroscopy (UPS) with a work function ≈4.2 eV of Ti 3 C 2 T X . Based on the Ti 3 C 2 T X /(n/p)-GaN Schottky junctions, high-speed photodetectors and stable orange light emitting diodes (LEDs) are fabricated. The Ti 3 C 2 T X /n-GaN heterostructure photodetector shows a short rise time (60 ms) and decay time (20 ms), a high responsivity (44.3 mA W −1 ) and on/off ratio (≈11300) under a light source of 365 nm wa...

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“…The current development of GaN-based devices such as light sources (LEDs and LDs), power transistors (HEMTs and MOSFETs) pave the ways for the GaN-based optoelectronic integration [200][201][202][203]. Besides, GaN-based photodetectors with high specific detectivity and fast response speed have been demonstrated [204][205][206]. The high refractive index of GaN also makes it an ideal material for passive optics, like gratings, distributed Bragg reflectors (DBRs), and resonant cavities [207][208][209].…”

Section: Gan-based Optoelectronic Integrationmentioning

confidence: 99%

Recent progress of integrated circuits and optoelectronic chips

Xiang

Han

Zhang

et al. 2021

Sci. China Inf. Sci.

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Integrated circuits (ICs) and optoelectronic chips are the foundation stones of the modern information society. The IC industry has been driven by the so-called "Moore's law" in the past 60 years, and now has entered the post Moore's law era. In this paper, we review the recent progress of ICs and optoelectronic chips. The research status, technical challenges and development trend of devices, chips and integrated technologies of typical IC and optoelectronic chips are focused on. The main contents include the development law of IC and optoelectronic chip technology, the IC design and processing technology, emerging memory and chip architecture, brain-like chip structure and its mechanism, heterogeneous integration, quantum chip technology, silicon photonics chip technology, integrated microwave photonic chip, and optoelectronic hybrid integrated chip.

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Ultra‐High and Fast Ultraviolet Response Photodetectors Based on Lateral Porous GaN/Ag Nanowires Composite Nanostructure

Cited by 30 publications

References 48 publications

High‐Performance Harsh‐Environment‐Resistant GaO_X Solar‐Blind Photodetectors via Defect and Doping Engineering

High‐Performance Harsh‐Environment‐Resistant GaO_X Solar‐Blind Photodetectors via Defect and Doping Engineering

MXene‐GaN van der Waals Heterostructures for High‐Speed Self‐Driven Photodetectors and Light‐Emitting Diodes

Recent progress of integrated circuits and optoelectronic chips

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Ultra‐High and Fast Ultraviolet Response Photodetectors Based on Lateral Porous GaN/Ag Nanowires Composite Nanostructure

Cited by 30 publications

References 48 publications

High‐Performance Harsh‐Environment‐Resistant GaOX Solar‐Blind Photodetectors via Defect and Doping Engineering

High‐Performance Harsh‐Environment‐Resistant GaOX Solar‐Blind Photodetectors via Defect and Doping Engineering

MXene‐GaN van der Waals Heterostructures for High‐Speed Self‐Driven Photodetectors and Light‐Emitting Diodes

Recent progress of integrated circuits and optoelectronic chips

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High‐Performance Harsh‐Environment‐Resistant GaO_X Solar‐Blind Photodetectors via Defect and Doping Engineering

High‐Performance Harsh‐Environment‐Resistant GaO_X Solar‐Blind Photodetectors via Defect and Doping Engineering