Ultra-high aspect ratio poly-Si FinFET using an improved spacer formation technique

Poly-Si Thin-Film Transistors with N-Type Line-Array Doping Channels Fabricated by Nanoimprint Lithography

“…Polycrystalline-silicon thin-film transistors (poly-Si TFTs) are potential devices for various applications, including active-matrix organic light-emitting diodes (AMOLEDs), active-matrix liquid crystal displays (AMLCDs), [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] nonvolatile memories, [17][18][19] sensors, 20 and three-dimensional (3D) integrated circuits (ICs). [21][22][23][24][25] Poly-Si TFTs with the modified channels, such as the nanowire (NW), [9][10][11][12] multigate, 24 finlike, 15,16 and bridge-grain (BG) TFTs, 13,14 have been proposed to improve electrical performance. In these methods, dense and/or periodic nanoscale patterns must be introduced on the poly-Si TFTs channels.…”