Ultra-high-aspect-ratio structures through silicon using infrared laser pulses focused with axicon-lens doublets

Abstract

We describe how a direct combination of an axicon and a lens can represent a simple and efficient beamshaping solution for laser material processing applications. We produce high-angle pseudo-Bessel micro-beams at 1550 nm, which would be difficult to produce by other methods. Combined with appropriate stretching of femtosecond pulses, we access optimized conditions inside semiconductors allowing us to develop high-aspectratio refractive-index writing methods. Using ultrafast microscopy techniques, we characterize the delivered local intensities and the triggered ionization dynamics inside silicon with 200-fs and 50-ps pulses. While similar plasma densities are produced in both cases, we show that repeated picosecond irradiation induces permanent modifications spontaneously growing shot-after-shot in the direction of the laser beam from front-surface damage to the back side of irradiated silicon wafers. The conditions for direct microexplosion and microchannel drilling similar to those today demonstrated for dielectrics still remain inaccessible. Nonetheless, this work evidences higher energy densities than those previously achieved in semiconductors and a novel percussion writing modality to create structures in silicon with aspect ratios exceeding ∼700 without any motion of the beam. The estimated transient change of conductivity and measured ionization fronts at near luminal speed along the observed microplasma channels support the vision of vertical electrical connections optically controllable at GHz repetition rates. The permanent silicon modifications obtained by percussion writing are light-guiding structures according to a measured positive refractive index change exceeding 10 −2 . These findings open the door to unique monolithic solutions for electrical and optical through-silicon-vias which are key elements for vertical interconnections in 3D chip stacks.