Ultra-High Frequency GaN Nanoscale Vacuum Electronic Devices

Wei, Yazhou; Li, Mo; Luo, Yong; Zhang, Jian

doi:10.1109/ivec51707.2021.9722483

Cited by 1 publication

(1 citation statement)

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“…In the previous study, we conducted a simulation to explore the relationship between the structure of GaN NACD and its performance. [ 16 ] Here, we demonstrate a vertical GaN NACD fabricated by IC‐compatible techniques on a 2‐inch sapphire wafer with an air channel down to 50 nm for the first time. An output current of 0.522 mA@3 V, and 11 mA@10 V is achieved, which surpasses the results of previously reported NACDs.…”

Section: Introductionmentioning

confidence: 99%

Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication

et al. 2023

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Nanoscale air channel transistors (NACTs) have received significant attention due to their remarkable high-frequency performance and high switching speed, which is enabled by the ballistic transport of electrons in sub-100 nm air channels. Despite these advantages, NACTs are still limited by low currents and instability compared to solid-state devices. GaN, with its low electron affinity, strong thermal and chemical stability, and high breakdown electric field, presents an appealing candidate as a field emission material. Here, a vertical GaN nanoscale air channel diode (NACD) with a 50 nm air channel is reported, fabricated by low-cost IC-compatible manufacturing technologies on a 2-inch sapphire wafer. The device boasts a record field emission current of 11 mA at 10 V in the air and exhibits outstanding stability during cyclic, long-term, and pulsed voltage testing. Additionally, it displays fast switching characteristics and good repeatability with a response time of fewer than 10 ns. Moreover, the temperature-dependent performance of the device can guide the design of GaN NACTs for applications in extreme conditions. The research holds great promise for large current NACTs and will speed up their practical implementation.

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Section: Introductionmentioning

confidence: 99%