Ultra high power, ultra low RIN up to 20 GHz 1.55 μm DFB AlGaInAsP laser for analog applications

Abstract

Low levels of intensity noise in semiconductor lasers is a key feature for numerous applications such as high resolution spectroscopy, fiber-optic sensors, signal distribution in broadband analog communications as CATV, and more generally for microwave photonics systems. In particular, a DFB laser with very low relative intensity noise (RIN) levels from 0.1 to 20 GHz is a key component as it correspond to the whole frequency bandwidth of interest for radars. Several approaches have been reported but most suffer from the compromise between RIN level and power out level and stability, with RIN level in the range -150 dB.Hz -1 to -155 dB.Hz -1 in this frequency range [1,2]. We report here results from a new AlGaInAs DFB laser developed at 3S PHOTONICS. Excellent device performance is observed across an operating range from the laser threshold up to the thermal roll-over. Pure longitudinal single mode at 1545 nm is obtained over the whole current operating range with side mode suppression ratio higher than 50dB. The maximum output power reaches up to 130 mW. In these conditions, RIN levels below -160 dB.Hz -1 is obtained in up to 20 GHz. These are the best results to our knowledge combining such high single mode output power with such low RIN level in the frequency range 0.4-20 GHz.

Design and optimization of distributed feedback lasers with low relative intensity noise

“…As the injection current increases, the power increases linearly, and the peak RIN gradually decreases. At an injection level of 1 A, a peak RIN lower than -166 dB/Hz and an output more than 400 mW can be achieved for the laser, which meets the requirements of light sources for microwave photonic links (< -165 dB/Hz) 8 . This is mainly due to high emission power under large bias.…”

Relative Intensity Noise in a Two‐Section Distributed Bragg Reflector Tapered Laser

“…[15] For gigabit passive optical networks (GPON) at frequencies ranging from 45 to 1244 MHz the RIN should be lower than À145 dB Hz À1 for the entire modulation bandwidth, [16] and for optical fiber communication with direct modulation at 1.25 GHz bandwidth the RIN should be lower than À142 dB Hz À1 . [17,18] RIN in semiconductor lasers has been extensively studied theoretically and experimentally in different types of single section devices, such as Fabry-Perot (FP) lasers, [19,20] distributed feedback (DFB) lasers, [18,21] DFB tapered lasers, [22] DBR lasers, [23] vertical cavity surface emitting lasers (VCSEL) [24] and semiconductor optical amplifiers (SOA) with straight [25] or tapered geometries. [26] The RIN properties of two-section lasers with straight sections [27] and tapered section [10] have been studied, as well as those of masteroscillator power-amplifiers (MOPA) in integrated [13,28,29] or hybrid [30] configurations.…”

“…RIN in semiconductor lasers has been extensively studied theoretically and experimentally in different types of single section devices, such as Fabry–Perot (FP) lasers, [ 19,20 ] distributed feedback (DFB) lasers, [ 18,21 ] DFB tapered lasers, [ 22 ] DBR lasers, [ 23 ] vertical cavity surface emitting lasers (VCSEL) [ 24 ] and semiconductor optical amplifiers (SOA) with straight [ 25 ] or tapered geometries. [ 26 ] The RIN properties of two‐section lasers with straight sections [ 27 ] and tapered section [ 10 ] have been studied, as well as those of master‐oscillator power‐amplifiers (MOPA) in integrated [ 13,28,29 ] or hybrid [ 30 ] configurations.…”