Ultra-high Q.f product laterally-coupled AlN/silicon and AlN/sapphire High Overtone Bulk Acoustic wave Resonators

Reinhardt, Alexandre; Delaye, M.T.; Abergel, J.; Kovacova, Veronika; Allain, M.; Andreutti, L.; Mercier, Denis; Georges, J.B.; Tomaso, Florian; Lassagne, Pierre-Patrick; Defaÿ, E.; Chretien, Nicolas; Baron, T.; Martin, Gilles; Lebrasseur, Éric; Ballandras, S.; Chommeloux, L.; Lesage, Jean-Marc

doi:10.1109/ultsym.2013.0490

Cited by 7 publications

(4 citation statements)

References 3 publications

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“…In a previous work [5], a temperature-stable HBAR have been showed based on the combination of a Lithium of Niobate piezoelectric layer and a Quartz substrate, with Q factors in excess of 10,000 above 1 GHz . In an other previous work [6], a high frequency and high quality HBAR based on AlN piezoelectric film sputtered on Sapphire substrate have been showed, reached Q.f values of 6.44×10 13 Hz. The new HBAR device stack, based on a thinned LiNbO 3 piezoelectric layer transferred on a LiTaO 3 substrate combine better characteristic of the both previous resonator.…”

Section: Discussionmentioning

confidence: 75%

“…In [6] we fabricated HBARs on Silicon and Sapphire substrates which reached Q.f values of respectively 7.2×10 12 and 6.44×10 13 Hz. Although the quality factors obtained with Sapphire substrates are impressive, this substrate led to a temperature dependence of close to -35 ppm/K.…”

Section: A Hbar Qf Productmentioning

confidence: 99%

“…This work presents the later approach with HBAR devices. Such resonators combine operation at gigahertz frequencies, thanks to the use of a thin piezoelectric film, with the high quality factors brought by low propagation losses in a bulk substrate such as Quartz [5] or Sapphire [6]. Increasing quality factor is a key aspect to decrease Leeson's frequency.…”

Section: Introductionmentioning

confidence: 99%

“…However, the targeted performances of an ideal HBAR are a high resonance frequency (higher than 1 GHz), a temperature coefficient of frequency (TCF) less than 10 ppm over a wide range of temperature around a turnover temperature, and a Q.f product higher than 5×10 13 Hz. The goal of this paper is to present a new HBAR device stack, based on a thinned LiNbO 3 piezoelectric layer transferred on a LiTaO 3 substrate, satisfying these specifications and to compare its performances with the previous works which present low TCF [5] or high quality factor [6]. Firstly, we discuss the choice of materials to reach to these performances (high quality factor, low TCF).…”

Section: Introductionmentioning

confidence: 99%

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High-Q and low TCF HBAR based on LiTaO<inf>3</inf> substrate

Baron

Martin

Chretien

et al. 2014

2014 IEEE International Frequency Control Symposium (FCS)

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This work presents a comparison between three different High-overtone Bulk Acoustic Resonators based on different materials. Furthermore, the goal of this work is to realize a High-overtone Bulk Acoustic Resonators presented a temperature coefficient of frequency less than 10 ppm over a wide range of temperature around a turnover temperature, and a Q.f product higher than 5×10 13 Hz. After a discussion about the choice of materials to achieve such resonator and the description of our microfabrication, three High-overtone Bulk Acoustic Resonators based on a Lithium of Niobate, Quartz, Lithium of Tantalate, AlN and Sapphire materials are compared in term of the temperature coefficient of frequency, the Q.f product and the phase noise. The new HBAR exhibits a Q.f product around 3.7×10 13 Hz, a turnover around 55°C with a parabolic shape and a temperature coefficient of frequency around +/-4 ppm/K.

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Section: Discussionmentioning

confidence: 75%

Section: A Hbar Qf Productmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

High-Q and low TCF HBAR based on LiTaO<inf>3</inf> substrate

Baron

Martin

Chretien

et al. 2014

2014 IEEE International Frequency Control Symposium (FCS)

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A high-overtone bulk acoustic wave resonator-oscillator-based 4.596 GHz frequency source: Application to a coherent population trapping Cs vapor cell atomic clock

Daugey

Friedt

Martin

et al. 2015

Review of Scientific Instruments

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This article reports on the design and characterization of a high-overtone bulk acoustic wave resonator (HBAR)-oscillator-based 4.596 GHz frequency source. A 2.298 GHz signal, generated by an oscillator constructed around a thermally controlled two-port aluminum nitride-sapphire HBAR resonator with a Q-factor of 24,000 at 68 °C, is frequency multiplied by 2-4.596 GHz, half of the Cs atom clock frequency. The temperature coefficient of frequency of the HBAR is measured to be -23 ppm/ °C at 2.298 GHz. The measured phase noise of the 4.596 GHz source is -105 dB rad(2)/Hz at 1 kHz offset and -150 dB rad(2)/Hz at 100 kHz offset. The 4.596 GHz output signal is used as a local oscillator in a laboratory-prototype Cs microcell-based coherent population trapping atomic clock. The signal is stabilized onto the atomic transition frequency by tuning finely a voltage-controlled phase shifter implemented in the 2.298 GHz HBAR-oscillator loop, preventing the need for a high-power-consuming direct digital synthesis. The short-term fractional frequency stability of the free-running oscillator is 1.8 × 10(-9) at one second integration time. In locked regime, the latter is improved in a preliminary proof-of-concept experiment at the level of 6.6 × 10(-11) τ(-1/2) up to a few seconds and found to be limited by the signal-to-noise ratio of the detected CPT resonance.

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