2021
DOI: 10.1038/s41563-021-00942-3
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Ultra-high-quality two-dimensional electron systems

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Cited by 121 publications
(88 citation statements)
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“…A major portion of the FQHE phenomenology that occurs in the LLL can be wellunderstood using the theory of non-interacting CFs [3]. Nevertheless, in the range of fillings 1/3 < ν < 2/5 very high-quality samples exhibit signatures of FQHE at ν = 4/11, 5/13, 6/17, 3/8, 3/10, 4/13, and 5/17 [4][5][6][7][8]. An understanding of these fragile states necessitates going beyond the framework of weakly interacting composite fermions as these states likely arise from an FQHE of CFs themselves [9][10][11][12].…”
Section: Introductionmentioning
confidence: 99%
“…A major portion of the FQHE phenomenology that occurs in the LLL can be wellunderstood using the theory of non-interacting CFs [3]. Nevertheless, in the range of fillings 1/3 < ν < 2/5 very high-quality samples exhibit signatures of FQHE at ν = 4/11, 5/13, 6/17, 3/8, 3/10, 4/13, and 5/17 [4][5][6][7][8]. An understanding of these fragile states necessitates going beyond the framework of weakly interacting composite fermions as these states likely arise from an FQHE of CFs themselves [9][10][11][12].…”
Section: Introductionmentioning
confidence: 99%
“…Sample 2 is also a 2DEG confined to a GaAs/AlGaAs heterostructure, but differs in several aspects from Sample 1. It belongs to the most recent generation of highmobility samples 67 . Its density is significantly less than that of Sample 1, n = 1.0 × 10 11 cm −2 , and its mobility is μ = 3.5 × 10 7 cm 2 /Vs.…”
Section: Methodsmentioning
confidence: 99%
“…Modern molecular beam epitaxy makes it possible to grow selectively doped GaAs quantum wells where the two-dimensional (2D) electron gas has a low-temperature mobility of m 2 /(V s) [1][2][3][4]. However, despite the advances made in growing technology and optimizing the design of high-mobility heterostructures, they are not ideal 2D electron systems.…”
Section: Doi: 101134/s0021364021190048mentioning
confidence: 99%