Ultra-high resolution mass spectroscopy of boron cluster ions

Jacobson, D. C.; Horsky, T. N.; Krull, W.; Milgate, Bob

doi:10.1016/j.nimb.2005.05.025

Cited by 17 publications

(5 citation statements)

References 1 publication

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“…However, this B implantation conditions present problems of energy contamination when decelerating the beam due to the existence of neutral B atoms in it. Several B molecules ͑boron fluoride, 4 decaborane, 5 and octodecaborane 6 ͒ have been used to overcome these drawbacks to take advantage of SPER. Nevertheless, after regrowth some defects remain beyond the initial position of the amorphous/crystalline interface and inject Si interstitials during postimplant annealing treatments causing dopant redistribution and deactivation.…”

Section: Introductionmentioning

confidence: 99%

Improved atomistic damage generation model for binary collision simulations

Santos

Marqués

Pelaz

et al. 2009

Journal of Applied Physics

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We have carried out a classical molecular dynamics study to quantify the conditions under which damage is generated by ion implantation in silicon at energies below the displacement threshold. The obtained results have been used to construct a general framework for damage generation which captures the transition from ballistic (high above the displacement threshold) to thermal (around and below the displacement threshold) regime. The model, implemented in a binary collision code, has been successfully used to simulate monatomic and especially molecular implantations, where nonlinear effects occur. It reproduces the amount and morphology of generated damage at atomic level in good agreement with classical molecular dynamics simulations but with a computational gain factor of ∼103 to ∼104. The incorporation of this damage model to process simulators will improve the prediction of amorphization conditions and provide a convenient tool for simulating molecular implants not available to date. Although this work has been focused on silicon, the model can be applied with appropriate calibration to other materials where the thermal regime of damage generation plays an important role.

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Section: Introductionmentioning

confidence: 99%

Improved atomistic damage generation model for binary collision simulations

Santos

Marqués

Pelaz

et al. 2009

Journal of Applied Physics

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“…1 But as implant energies are scaled down for each new device generation, monatomic B implantation shows several shortcomings, mainly related to production throughput and ionbeam, high-energy contamination. 2 The implantation of B clusters has been proposed as an alternative to overcome these drawbacks. The use of decaborane ͑B 10 H 14 ͒ has been investigated for more than a decade.…”

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confidence: 99%

Characterization of octadecaborane implantation into Si using molecular dynamics

et al. 2006

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We carried out molecular dynamics simulations of monatomic B and octadecaborane cluster implantations into Si. We obtained and analyzed the doping profiles, lateral straggling and the damage amount and morphology produced within the target, as well as its annealing behavior. Our simulation results indicate that the use of octadecaborane clusters for the fabrication of ultrashallow junctions shows several advantages with respect to monatomic B beams, mainly related to target self-amorphization which reduces channeling and the amount of residual damage at the end of range.

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“…For preamorphizing implants, the use of heavy ions such as Ge or Xe allows to form deeper a-layers with lower doses. N-type dopants (As) are usually self-amorphizing, while for p-type doping (B) molecular ions, such as BF2 or octodecaborane, can be used instead of monatomic B to promote self-amorphization and at the same time to achieve higher dose rates improving the throughput of implant tools [134,135]. If the dose rate is low, generated damage may have enough time to anneal out before the next cascade arrives into the same region.…”

Section: Damage Engineering By Implant Optimizationmentioning

confidence: 99%

Improved physical models for advanced silicon device processing

Pelaz

Marqués

Aboy

et al. 2017

Materials Science in Semiconductor Processing

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We review atomistic modeling approaches for issues related to ion implantation and annealing in advanced device processing. We describe how models have been upgraded to capture physical mechanisms in more detail as a response to the accuracy demanded in modern process and device modeling. Implantation and damage models based on the binary collision approximation have been improved to describe the direct formation of amorphous pockets for heavy or molecular ions. The use of amorphizing implants followed by solid phase epitaxial regrowth has motivated the development of detailed models that account for amorphization and recrystallization, considering the influence of crystal orientation and stress conditions. We apply simulations to describe the role of implant parameters to minimize residual damage, and we address doping issues that arise in non-planar structures such as FinFETs.

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Ultra-high resolution mass spectroscopy of boron cluster ions

Cited by 17 publications

References 1 publication

Improved atomistic damage generation model for binary collision simulations

Improved atomistic damage generation model for binary collision simulations

Characterization of octadecaborane implantation into Si using molecular dynamics

Improved physical models for advanced silicon device processing

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