Ultra-high Seebeck coefficient and low thermal conductivity of a centimeter-sized perovskite single crystal acquired by a modified fast growth method

Abstract

A centimeter-sized organic-inorganic hybrid lead-based perovskite CH 3 NH 3 PbI 3 (MAPbI 3 ) single crystal was obtained by using a modified fast and inverse-temperature growth method. The optical properties of this single crystal at room and low temperatures were studied in terms of optical absorption and photoluminescence measurements. The single crystal exhibited optical properties with a band-gap of 1.53 eV, which is comparable to a reported value. The temperature-dependent UV-vis spectra of this perovskite single crystal showed a unique structural phase transition as the temperatures varied. The These thermoelectric characteristics would be useful for potential thermoelectric applications if the electrical conductivity of this crystal is improved by tuning its composition.

Broadband Optical Detection Using the Spin Seebeck Effect

“…Using our estimates for ∇T and −∇V ISHE , we calculate a quantity akin to a traditional Seebeck coefficient for S LSSE in this Pt/YIG device: S LSSE = −∇V ISHE /∇T = 60 ± 7.8 nV/K. This estimate is in line with previous measurements of S LSSE in Pt/YIG heterostructures [38,39,48,49], but orders of magnitude below (electrical) Seebeck coefficients found in thermoelectric devices [50,51].…”

Efficient and Ambient‐Air‐Stable Solar Cell with Highly Oriented 2D@3D Perovskites

“…Similar crystal features are observed, indicating the surface morphologies of the 3D perovskite are unaffected by the high‐temperature flash‐annealing treatment. This is reasonable since the annealing time is very short (3–10 s) and the thermal conductivity of the 3D MAPbI 3 layer is very low, according to recent reports . The AVAI solutions are then spun‐cast on top of these flash‐annealed 3D perovskite films.…”

Fast Growth of Thin MAPbI3 Crystal Wafers on Aqueous Solution Surface for Efficient Lateral‐Structure Perovskite Solar Cells

“…In contrast to the previously reported methods that require days or weeks to grow centimeter size single crystals with growth speed of smaller than 0.13 cm h −1 , this method has a much faster growth speed of 3.0 cm h −1 along the solution surface direction. Because of the strong driven force by solvent‐evaporation was introduced to dramatically accelerate the crystals growth speed for wafer‐scale crystals on top of solution surface.…”

“…In order to make perovskite crystals have an impact with this HJ‐IBC structure, the crystals need to be easily formed at wafer‐scale for large‐area devices, and the crystal thickness should be thinner than the carrier diffusion length to achieve back contact with the benefit of material saving . For the growth of hybrid perovskite single crystals, there are mainly three methods reported so far: antisolvent vapor‐assisted crystallization, solution supersaturating at reduced temperature, and inverse solubility crystallization . However, none of the current techniques for growing perovskite single crystals could make wafer‐size perovskite crystals with thickness comparable to charge diffusion length.…”