Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification

Abstract

Strain engineering has attracted great attention, particularly for epitaxial films grown on a different substrate. Residual strains of SiC have been widely employed to form ultra-high frequency and high Q factor resonators. However, to date the highest residual strain of SiC was reported to be limited to approximately 0.6%. Large strains induced into SiC could lead to several interesting physical phenomena, as well as significant improvement of resonant frequencies. We report an unprecedented nano strain-amplifier structure with an unltra-high residual strain up to 8% utilizing the natural residual stress between epitaxial 3C SiC and Si. In addition, the applied strain can be tuned by changing the dimensions of the amplifier structure. The possibility of introducing such a controllable and ultra-high strain will open the door to investigating the physics of SiC in large strain regimes, and the development of ultra sensitive mechanical sensors.

Utilizing large hall offset voltage for conversion free 4H-SiC strain sensor

“…In the present work, the operation of the 4H-SiC fourterminal strain sensor under uniaxial strain/stress was performed using a bending beam method. This technique was widely employed for the characterizations of the strain induced effect in semiconductors [9,12,[16][17][18]. As can be seen in Fig.…”

“…The piezoresistive effect, represented by the gauge factor (GF) [11] or piezoresistive coefficients of twoterminal SiC devices, has been utilized for mechanical sensing applications with relatively high GFs [12][13][14][15][16][17][18][19]. There are numerous studies on the 3C-SiC and n-type 4H-SiC based four-terminal strain sensors with a relatively high sensitivity and good reproducibility [4,[20][21][22].…”

Stretchable Sensor Made of MWCNT/ZnO Nanohybrid Particles in PDMS

“…Conventional electronic devices fabricated on rigid substrates have limitations in flexibility, and the miniaturization of integrated devices without compromising on key parameters of the device such as smaller, smart, and faster is a key focus of recent research. [ 1–4 ] One step toward future electronics is the development of flexible, stretchable, and human‐friendly devices attached directly to the human body. [ 5–9 ] These flexible and stretchable devices have drawn the attention of many researchers due to their ability to directly embed into clothing or even on human skin, which has paved the way toward new applications including personal health monitoring, therapeutic interventions, and human motion detection.…”

Highly sensitive p-type 4H-SiC van der Pauw sensor

“…Specically, SiC-based pressure sensors, accelerometers and strain sensors have been reported with a good performance even when operating at high temperatures. [1][2][3][4][5] Possessing a superior large energy-band gap (2.3-3.2 eV), SiC-based devices can operate at higher temperatures by eliminating the thermally induced leakage of the minority carriers. 6 Among more than two hundred SiC polytypes, 4H-SiC is favorable for MEMS devices owing to its excellent properties 7,8 and commercial availability.…”