2015
DOI: 10.1016/j.talanta.2015.01.014
|View full text |Cite
|
Sign up to set email alerts
|

Ultra high vacuum high precision low background setup with temperature control for thermal desorption mass spectroscopy (TDA-MS) of hydrogen in metals

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
8
0

Year Published

2016
2016
2024
2024

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 18 publications
(8 citation statements)
references
References 28 publications
0
8
0
Order By: Relevance
“…However, compared to the non-immersed alloy in the 0.9% NaCl solution, the NiTi archwire indicates arise in the martensite start stress of about 10 MPa. This phenomenon is attributed to the solid-solution hardening during hydrogen charging [ 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 ].…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…However, compared to the non-immersed alloy in the 0.9% NaCl solution, the NiTi archwire indicates arise in the martensite start stress of about 10 MPa. This phenomenon is attributed to the solid-solution hardening during hydrogen charging [ 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 ].…”
Section: Resultsmentioning
confidence: 99%
“…All TDA examinations were carried out after 24 h hydrogen charging. The total amount of hydrogen within the specimen was determined to be the sum of desorbed hydrogen within peaks of a hydrogen desorption rate [ 26 , 27 ]. At least two analyses have been done for each cyclic condition, and the experimental errors of the absorbed-hydrogen amount have been estimated between 5% and 10%.…”
Section: Methodsmentioning
confidence: 99%
“…With this purpose in mind, the recent molecular-beam thermal desorption spectrometry (MB-TDS) is used in this work [ 12 ]. This technique is a variant of thermal desorption spectrometry which has been developed to detect the hydrogen release by the lowest amounts of solid samples, with several advantages [ 12 , 13 , 14 , 15 , 16 ].…”
Section: Introductionmentioning
confidence: 99%
“…The detection limit of these techniques strongly depends on the sample volumes because a larger total amount of hydrogen facilitates detection. Therefore, many quantitative hydrogen analyses have been performed on bulk samples with large volumes such as polycrystals and single crystals [9,13]. However, semiconductor device technology is generally based on thin-film deposition and fine-scale processing technologies, for which additional material purification and refinement of processing techniques have been rapidly advancing.…”
Section: Introductionmentioning
confidence: 99%
“…Among the previously discussed hydrogen detection techniques, SIMS and RNRA are the most sensitive quantitative techniques for thin films (hydrogen detection limit ≈ 10 18 atoms/cm 3 ) [11,12]. However, quantitative analyses of extremely low hydrogen concentrations of < 10 18 atoms/cm 3 have only been performed for bulk samples using optical detection [9] and TDS [13]. Thus, the development of hydrogen detection techniques for thin films with much higher sensitivity is strongly needed to better understand the role of hydrogen impurities and accurately control the hydrogen concentration in semiconductor devices.…”
Section: Introductionmentioning
confidence: 99%