2016
DOI: 10.1149/07512.0011ecst
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Ultra Large Scale Manufacturing Challenges of Silicon Carbide and Gallium Nitride Based Power Devices and Systems

Abstract: Both silicon carbide (SiC) and gallium nitride (GaN) have the potential of developing transformative power electronics for future needs. The defect density of current devices is quite high and only niche applications will continue to evolve unless major changes are made in the manufacturing process. In this paper we have proposed advanced process control (APC) based single wafer processing (SWP) tools for manufacturing SiC and GaN power devices. New manufacturing tools have the potential of realizing full pote… Show more

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Cited by 5 publications
(5 citation statements)
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References 13 publications
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“…In case of long-haul transmission, HVDC is used and there is opportunity to design and fabricate high voltage solid state silicon carbide converters. The use of larger silicon carbide wafers and the use of single wafer manufacturing has the potential of bringing cost of SiC power electronics at par or lower than silicon power electronics [95]. Based on the isolation techniques it is far more viable to isolate a DC charging station in case of a cyber-attack.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…In case of long-haul transmission, HVDC is used and there is opportunity to design and fabricate high voltage solid state silicon carbide converters. The use of larger silicon carbide wafers and the use of single wafer manufacturing has the potential of bringing cost of SiC power electronics at par or lower than silicon power electronics [95]. Based on the isolation techniques it is far more viable to isolate a DC charging station in case of a cyber-attack.…”
Section: Discussionmentioning
confidence: 99%
“…If the DC power generated by PV and battery-based power network can be used locally, there is no need of transmission of power. This concept is exactly what Thomas Edison proposed and involve minimum distance between power source and load as well as minimum power conversions [95]. In case of long-haul transmission, HVDC is used and there is opportunity to design and fabricate high voltage solid state silicon carbide converters.…”
mentioning
confidence: 87%
“…No supplychain issues in the manufacturing of its related power electronics are predicted due to the abundance of elements of SiC. Higher performance, higher reliability, higher yield, and lower cost of ownership of SiC based power electronics will be provided if policies in favor of electrification of transportation, volume manufacturing, single wafer processing [40] and large diameter wafer manufacturing are implemented [41]. Silicon carbide fabs are migrating from 150 mm wafers to 200 mm wafers [42].…”
Section: Manufacturing Cost Reduction Of Silicon Carbide Power Electr...mentioning
confidence: 99%
“…The SST is different from the legacy distribution transformers because of the involvement of power electronic converters, which offers typical functionalities, such as multilevel power conversions (high voltage AC/DC power conversion for DC buses, DC/DC conversion for high-frequency DC regulated buses, and DC/AC conversion stages for low-voltage regulated AC buses), and makes it a three-level power exchange [42]. The size of the SST transformer is reduced considerably compared with that of the conventional transformer because of the employment of high-frequency silicon carbide (SiC) insulated gate bipolar transistor (IGBT) technology, which makes it lighter and more compact [43,44]. SST will act as a smart and intelligent plug-and-play interface device that supports different interfaces (AC/DC) via AC and DC ports.…”
Section: Solid State Transformer (Sst) Levelmentioning
confidence: 99%