Ultra-low Contact Resistivity of PtHf Silicide Utilizing Dopant Segregation Process

Ohmi, Shun–ichiro; Chen, Mengyi; Masahiro, Yasushi

doi:10.1007/s11664-016-5002-7

Cited by 6 publications

(1 citation statement)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[14][15][16][17][18] Several studies have been conducted to achieve a high doping concentration of phosphorus, such as with additional ion implantation for low contact resistivity. 19,20) However, the ion implantation process inevitably damages the substrate. A layer doped with ion implantation has disadvantages of a broader distribution of contact resistivity and a rougher interface and silicide surface than that in the in situ phosphorus-doped (ISPD) epitaxial Si layer.…”

mentioning

confidence: 99%

Improvement of contact resistivity of titanium silicide on P-doped epitaxial Si using a Se interlayer

Park

Choi

et al. 2020

Appl. Phys. Express

View full text Add to dashboard Cite

We propose a method to reduce the contact resistivity of titanium silicide (TiSi2) on phosphorus-doped epitaxial silicon by introducing a thin Se layer at the Ti/Si interface. The Se interlayer delays transition from the C49 to the C54 phase and changes the dominant diffusing species of TiSi2 formation from Si to Ti. In addition, the Se interlayer worsens the interface roughness between TiSi2/Si. The contact resistivity of the sample with the Se interlayer improves by one order of magnitude, which is significant. This improvement is attributed to the suppressed diffusion of P and low Schottky barrier height.

show abstract