Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal–Semiconductor–Metal Photodetectors for High-Temperature Applications

Xie, Feng; Lu, Hai; Chen, Dunjun; Ji, Xiaoli; Yan, Feng; Zhang, Rong; Zheng, Yi; Li, Liang; Zhou, Jianjun

doi:10.1109/jsen.2012.2184533

Cited by 81 publications

(49 citation statements)

References 14 publications

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“…Feng et al . reported AlGaN-based solar-blind MSM photodetectors which worked at a high temperature of more than 150 °C on a high-quality AlN buffer layer [145]. The device exhibited ultra-low dark current in fA range at RT under 20 V bias, and a breakdown voltage higher than 300 V. The EQE at ∼275 nm was around 64% with a UV/visible rejection ratio up to four orders of magnitude.…”

Section: Semiconductor Thin-film Uv Photodetectormentioning

confidence: 99%

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

Sang

Liao

Sumiya

2013

Sensors

736

435

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Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.

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Section: Semiconductor Thin-film Uv Photodetectormentioning

confidence: 99%

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

Sang

Liao

Sumiya

2013

Sensors

736

435

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“…6 Fig . 5 illustrates the plot of the responsivity versus dark current for the state-of-the-art solar blind (230-290 nm) UV detectors reported [4][5][6]8,[10][11]16,[30][31][32][33][34][35][36][37] for the devices based on Al x Ga 1-x N as well as on β-Ga 2 O 3 . The detectors reported in this work have excellent responsivity while maintaining a very low dark current for 230-240 nm range.…”

mentioning

confidence: 99%

High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

Pratiyush

Krishnamoorthy

Solanke

et al. 2017

Applied Physics Letters

210

122

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“…In terms of conventional solar-blind photodetectors, Xie et al have reported AlGaN-based metal-semiconductor-metal photodetectors showing a quantum efficiency (QE) of 64% under 10 V bias with a solar-blind/ultraviolet rejection ratio up to four orders of magnitude. 9 The same research group also reported an AlGaN-based p-i-n photodetectors with a high QE of 62%. 10 Recently, Cicek et al enhanced the QE of AlGaNbased p-i-n photodetectors up to a remarkable high value of 89%.…”

Section: Introductionmentioning

confidence: 94%

Demonstration of an AlGaN-based solar-blind high-voltage photoconductive switch

Chen

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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A solar-blind photoconductive semiconductor switch (PCSS) is first fabricated on high-resistivity Al0.4Ga0.6N layer grown on sapphire substrate. The PCSS exhibits a cutoff wavelength of ∼280 nm and a dark resistivity of ∼1012 Ω cm. A maximum blocking voltage of more than 950 V is obtained, corresponding to a breakdown electric-field of >1.35 MV/cm for the active AlGaN layer. When excited by a 266 nm ultraviolet pulsed laser, the PCSS under 500 V bias could produce a peak photocurrent density of 11.5 kA/cm2 within a rise time of ∼15 ns. The fall time of the photocurrent pulse is mainly RC time limited.

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Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal–Semiconductor–Metal Photodetectors for High-Temperature Applications

Cited by 81 publications

References 14 publications

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

Demonstration of an AlGaN-based solar-blind high-voltage photoconductive switch

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