Ultra low miller capacitance trench-gate IGBT with the split gate structure

Ohi, Kota; Ikura, Yoshihiro; Yoshimoto, A.; Sugimura, Kazuyuki; Onozawa, Yuichi; Takahashi, H.; Otsuki, M.

doi:10.1109/ispsd.2015.7123380

Cited by 30 publications

(17 citation statements)

References 5 publications

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“…The FOC1-embedded gate introduces the additional gate capacitances to the SIGBT [10,13]. However, because the P-well is connected to the cathode, the additional gate (WC = 60 m): 6.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

A Novel Shielded IGBT (SIGBT) With Integrated Diodes

Chen

Lin

et al. 2020

IEEE J. Electron Devices Soc.

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A novel 3.3 kV Shielded Insulated Gate Bipolar Transistor (SIGBT) is proposed in this paper. Unlike the partly shielded N-injector of the diode-clamped TIGBT, which is the carrier store layer, the SIGBT features a diode-clamped Player to completely shield the N-injector and to protect the N-injector from high electric field more steadily. Then, the N-injector can be heavily doped to reduce the on-state voltage (Von), and Von can be designed independently of the breakdown voltage (BV). TCAD simulation indicates that under the same level of BV, compared with the conventional Carrier Store Trench Bipolar Transistor (CSTBT), the Eoff (the turn-off loss) of the proposed SIGBT is 85.6% lower under Von ≈ 1.4 V. Moreover, the saturation current density also decreases by 31.2%. Index Terms-carrier store trench bipolar transistor (CSTBT), on-state voltage, shielded insulated gate bipolar transistor (SIGBT), saturation current.

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“…The FOC1-embedded gate introduces the additional gate capacitances to the SIGBT [10,13]. However, because the P-well is connected to the cathode, the additional gate (WC = 60 m): 6.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

A Novel Shielded IGBT (SIGBT) With Integrated Diodes

Chen

Lin

et al. 2020

IEEE J. Electron Devices Soc.

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“…There is a tight trade-off relationship between E on and turn-on dv/dt, which is related to C ge , or between V CEsat and the dv/dt. Hence the improvement of the trade-off generally requires complexities from the structural and wafer process points of view [40][41][42][43][44][45][46][47][48]. In the turn-off period, it is also inevitable to face almost same situations in order to obtain waveforms with lower di/dt or less surge voltage [40,44,45,48].…”

Section: Improving Usabilitymentioning

confidence: 99%

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Honda

Minato

Shimizu

et al. 2019

IET Power Electronics

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From the power loss reduction and safety operation points of view, the direction of power device developments is simply one-way. However, from the application point of view, the direction is wide-ranging. There are a variety of requirements to be considered, such as switching waveforms, operational environments including not only the temperature range but also the combination of the humidity, the cosmic ray endurance, the package compactness and so on. In this study, several efforts are explained as the latest technologies.

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“…While several research efforts have been directed towards understanding ways to improve the trade-off relationship between the on-state voltage drop and the turn-off loss, very less work has been done on understanding ways to reduce the Miller capacitance (C res ) and gate-collector charge (Q gc ) [22][23][24]. A common approach to reduce the Miller capacitance is through the utilization of the split-gate [22] or shielded-gate concept [23], even though these two structures require more complex processing and structure design. Since a lower Miller capacitance value is very important for the working of IGBT devices, especially used for the motor drive application of lower switching frequency, it is necessary to reduce the IGBTs' Miller capacitance even further.…”

Section: Introductionmentioning

confidence: 99%