Ultra-Low-Power Cryogenic SiGe Low-Noise Amplifiers: Theory and Demonstration

Montazeri, Shirin; Wong, Wei-Ting; Coskun, Ahmet Hakan; Bardin, Joseph C.

doi:10.1109/tmtt.2015.2497685

Cited by 65 publications

(29 citation statements)

References 30 publications

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“…These characteristics also make most HBTs able to work effectively at cryogenic temperatures, although in some cases with higher low frequency noise [6][7][8][9]. Several cryogenic amplifiers are reported in literature that take full advantage of SiGe HBTs [10][11][12][13][14][15][16][17]. The HBT we used in this work is the BFP640 from Infineon.…”

Section: Description Of the Circuitmentioning

confidence: 99%

A low noise and low power cryogenic amplifier for single photoelectron sensitivity with large arrays of SiPMs

et al. 2020

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A: This paper presents a low noise amplifier for large arrays of silicon photomultipliers (SiPMs) operated in cryogenic environments, especially liquid argon (87 K) and liquid nitrogen (77 K). The goal is for one amplifier to read out a total photosensitive surface of tens of cm 2 while retaining the capability to resolve single photoelectron signals. Due to the large capacitance of SiPMs, typically a few nF per cm 2 , the main contributor to noise is the series (voltage) component. A silicon-germanium heterojunction bipolar transistor (HBT) was selected as the input device of the cryogenic amplifier, followed by a fully differential operational amplifier, operated in an unconventional feedback configuration. The input referred voltage noise of the circuit at 77 K is just below 0.4 nV/ √ Hz white (above 100 kHz) and 1 nV/ √ Hz at 10 kHz. The value of the base spreading resistance of the HBT at 77 K was determined from noise measurements at different bias currents. Power consumption of the full circuit is about 2.5 mW. The design gives the flexibility to optimally compensate the feedback loop for different values of the input capacitance, and obtain a gain-bandwidth product in the GHz range. The signal-to-noise ratio obtained in reading out SiPMs is discussed for the case of a 300 kHz low pass filter and compared with the upper limit that would derive from applying optimum filtering algorithms. K: Front-end electronics for detector readout, analogue electronic circuits, Photon detectors for UV, visible and IR photons (solid-state), Noble liquid detectors (scintillation, ionization, double-phase).

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Section: Description Of the Circuitmentioning

confidence: 99%

A low noise and low power cryogenic amplifier for single photoelectron sensitivity with large arrays of SiPMs

et al. 2020

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“…The first stage low-noise, low-power SiGe cryogenic amplifiers [19,20] are directly behind the mixer arrays and connected to the mixers by a flexible Mylar cable. Their low power consumption is essential to prevent the mixers from heating up and to minimize the cooling requirements.…”

Section: Intermediate Frequency Chainmentioning

confidence: 99%

“…HERO employs low-noise, low-power SiGe amplifiers [19,20] . They have a power consumption of less than 1mW.…”

Section: Enabling Technologiesmentioning

confidence: 99%

Heterodyn receiver for the Origins Space Telescope concept 2

Wiedner

Aalto

Amatucci

et al. 2018

Space Telescopes and Instrumentation 2018: Optical, Infrared, and Millimeter Wave

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The Origins Space Telescope (OST) is a NASA study for a large satellite mission to be submitted to the 2020 Decadal Review. The proposed satellite has a fleet of instruments including the HEterodyne Receivers for OST (HERO). HERO is designed around the quest to follow the trail of water from the ISM to disks around protostars and planets. HERO will perform high-spectral resolution measurements with 2x9 pixel focal plane arrays at any frequency between 468GHz to 2,700GHz (617 to 111 μm). HERO builds on the successful Herschel/HIFI heritage, as well as recent technological innovations, allowing it to surpass any prior heterodyne instrument in terms of sensitivity and spectral coverage.

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“…5 Benefitted from the heterojunction technique, Silicon Germanium (SiGe) technology is a compromise to satisfy both chip cost and high performance compared to CMOS and III-V technology (eg, GaAs or InP) counterparts, especially when SiGe technology introduces a thick copper back-end and thick dielectric layers, an on-chip inductor can easily has a Q of~12 around 10-20 GHz. 2,[6][7][8][9] In this study, resistive feedback topology is revisited. 1 Quasi-π (asymmetric π) input network working with inductive shunt-peaking technique and shunt-shunt feedback is adopted to enhance the noise performance as well as ensure wide input match.…”

Section: Introductionmentioning

confidence: 99%

An S‐ to Ku‐wideband low‐noise amplifier using asymmetric π filter and shunt‐peaking technique with simultaneous input match and noise flatness

Jing

Qian³

2019

Micro & Optical Tech Letters

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A single-stage S to Ku band (2-18 GHz) low noise amplifier (LNA) employing asymmetric π input match network and inductive shunt-peaking technique in 0.18 μm SiGe BiCMOS is presented. Shunt-shunt feedback is utilized to ensure wide operating as well as form a noise suppression topology. With the process of SiGe heterojunction bipolar transistor (HBT) featuring f T /f max of 240/280 GHz, the measurement of the proposed LNA results in S 11 below −10 dB, S 21 of 19.6 AE 0.8 dB and 2.2-3.2 dB noise figure (NF) from 2 to 18 GHz, drawing 9 mA DC current from a 3.3 V supply. K E Y W O R D SBiCMOS, feedback, low noise amplifier (LNA), SiGe, wideband

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Ultra-Low-Power Cryogenic SiGe Low-Noise Amplifiers: Theory and Demonstration

Cited by 65 publications

References 30 publications

A low noise and low power cryogenic amplifier for single photoelectron sensitivity with large arrays of SiPMs

A low noise and low power cryogenic amplifier for single photoelectron sensitivity with large arrays of SiPMs

Heterodyn receiver for the Origins Space Telescope concept 2

An S‐ to Ku‐wideband low‐noise amplifier using asymmetric π filter and shunt‐peaking technique with simultaneous input match and noise flatness

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