2018 IEEE International Symposium on Circuits and Systems (ISCAS) 2018
DOI: 10.1109/iscas.2018.8350944
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Ultra-Low Standby Power SRAM with Adaptive Data-Retention-Voltage-Regulating Scheme

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Cited by 11 publications
(2 citation statements)
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“…Although a conventional 6-T SRAM cell occupies the smallest area, it has a small read static noise margin (RSNM) because the read and write operations are through the same BL/BLB pair. The small RSNM makes it susceptible to read disturbance, particularly during the CIM operation because multiple SRAM cells on the same BL may be read simultaneously [43], [44], [45]. The read-decoupled eight-transistor (RD8T) SRAM cell shown in Fig.…”
Section: Proposed Low-leakage 8-t Sram Cellmentioning
confidence: 99%
“…Although a conventional 6-T SRAM cell occupies the smallest area, it has a small read static noise margin (RSNM) because the read and write operations are through the same BL/BLB pair. The small RSNM makes it susceptible to read disturbance, particularly during the CIM operation because multiple SRAM cells on the same BL may be read simultaneously [43], [44], [45]. The read-decoupled eight-transistor (RD8T) SRAM cell shown in Fig.…”
Section: Proposed Low-leakage 8-t Sram Cellmentioning
confidence: 99%
“…x m,off (t) is defined in the same way for Q m,off (t). Besides, the computation results from the BS are usually of small size [42]- [44], and the standby power accounts for a relatively small proportion of overall power consumption by standby power management techniques such as autonomous normallyoff power transition [45], adaptive data retention voltage regulating scheme [46], and power-gating and source bias design technique [47]. Therefore, by neglecting the power consumption of downlink reception and standby mode on devices, the total power consumption can be given by…”
Section: Computation Modelmentioning
confidence: 99%