Ultra-low temperature anodic bonding of silicon and glass based on nano-gap dielectric barrier discharge

Yao, Furong; Pan, Min Cheng; Zhu, Z. K.; Liu, Ji-zhu; Wang, Yangjun

doi:10.1007/s11771-021-4607-z

Cited by 4 publications

(1 citation statement)

References 26 publications

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“…As an important bonding technology in the fabrication of MEMS devices, anodic bonding plays a very important role in the silicon-based wafer level packaging, device level packaging, vacuum packaging and micro-nano packaging, that widely used in the packaging of microaccelerometers, micro-gyros, micro-probes and so forth. [1][2][3][4][5] The anodic bonding can minimize the thermal stress caused by mismatch of thermal expansion coefficient between different kinds of materials. Meanwhile, the anodic bonding also has the advantages of high connecting strength and good sealing performance without intermediate filler to assist though simple processing.…”

Section: Introductionmentioning

confidence: 99%

Flexible anodic bonding for the bonding between elastomer and metal

Zhao¹,

Liu

et al. 2022

J of Applied Polymer Sci

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Considering the inadaptability of traditional anodic bonding to polymer materials, the flexible anodic bonding process is developed. The bonding characteristics of the dynamic intelligent electric fields with the low-temperature plasma surface treatment to polymer and ultrasonic-assisted preconnection before bonding are very suitable for the anodic bonding of polymer elastomer to aluminum (Al) sheet. A series of composite polyurethane elastomer cathode materials (CPECs) with good bonding properties are prepared and characterized. The highest ionic conductivity of CPECs can reach to 2.7 Â 10 À3 S/cm (CPEC2) at 75 C. After bonded, it is determined that a uniform and dense intermediate bonding layer showed by SEM is formed between CPECs and Al. In addition, different elements including C, O, F, S, and Al are clearly iden-

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Section: Introductionmentioning

confidence: 99%