Ultra-low-temperature homoepitaxial growth of Sb-doped silicon

Blacksberg, Jordana; Hoenk, Michael E.; Nikzad, Shouleh

doi:10.1016/j.jcrysgro.2005.09.005

Cited by 20 publications

(17 citation statements)

References 29 publications

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“…To date, we have already demonstrated that this (previously demonstrated [9][10][11] ) Sb-doping process applied to TIS-provided silicon wafers is feasible and provides adequate activation and electrical conduction on 100 to 300 μm thick substrates. This work included optimizing the pre-MBE wafer-cleaning process and developing a new interlayer process to improve the quality of the Sb-doped layer.…”

Section: Discussionmentioning

confidence: 91%

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Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

Retherford

Bai

Ryu

et al. 2015

J. Astron. Telesc. Instrum. Syst

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Abstract. We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments. © The Authors.Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Discussionmentioning

confidence: 91%

“…The SIMS study on the sample (see Fig. 7) showed that surface segregation 9 is the cause of low dopant activation. To keep more of the dopant in the film, low growth temperatures (<450°C) are preferred.…”

Section: -14mentioning

confidence: 99%

Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

Retherford

Bai

Ryu

et al. 2015

J. Astron. Telesc. Instrum. Syst

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“…The CCD temperature cannot exceed 500°C (preferably 450°C), due to interdiffusion of silicon and the aluminum metallization at these temperatures. For the n-type delta-doping technique, JPL has developed procedures that will ensure the temperature of the device never exceeds 450°C for the cleaning and epitaxial growth 23 .…”

Section: Current Resultsmentioning

confidence: 99%

Advanced broadband imager for EUV and FUV studies with exquisite precision

et al. 2005

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Next generation, space-based, Sun-Earth System remote sensing missions place severe challenges on focal plane technologies to achieve their science goals. Among these are high sensitivity over a broad spectral range, small pixel size, fast readout, radiation tolerance, low power consumption, photometric accuracy & stability, and scalable mosaic technology for constructing large focal plane mosaics. Our Jet Propulsion Laboratory, Lawrence Berkeley National Laboratory, University of Alabama in Huntsville collaboration has begun the development of an Advanced Broadband Imager (ABI) to address these challenges for future Sun Solar System Connection science missions. We describe here the development of the delta-doped, high-purity, p-channel charge coupled devices, which form the heart of the ABI imager, and our plans for future development. The current technical readiness levels of ABI component technologies are TRL 2 to TRL 4. Our proposed development program envisions achieving TRL 5 within 3 years with flight validation in the context of an Earth Sun System Science mission occurring within 6 years via the Quiet-Sun Transition Region Explorer EUV Telescope (Q-STREET) rocket-borne observatory.

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“…Delta-doped CCDs, developed at JPL's Microdevices Laboratory, have achieved stable 100% internal quantum efficiency in the visible, near UV, and vacuum UV regions of the spectrum. [15][16][17][18][19][20][21] In this approach, an epitaxial silicon layer is grown on the back surface of a fully-fabricated CCD or CMOS back-illuminated imager using molecular beam epitaxy (MBE). 19 During the growth, approximately a third of a monolayer of dopant atoms is deposited on the surface, followed by growth of a silicon cap layer.…”

Section: A Delta Dopingmentioning

confidence: 99%

A system and methodologies for absolute quantum efficiency measurements from the vacuum ultraviolet through the near infrared

Jacquot

Monacos

Hoenk

et al. 2011

Review of Scientific Instruments

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In this paper we present our system design and methodology for making absolute quantum efficiency (QE) measurements through the vacuum ultraviolet (VUV) and verify the system with delta-doped silicon CCDs. Delta-doped detectors provide an excellent platform to validate measurements through the VUV due to their enhanced UV response. The requirements for measuring QE through the VUV are more strenuous than measurements in the near UV and necessitate, among other things, the use of a vacuum monochromator, good dewar chamber vacuum to prevent on-chip condensation, and more stringent handling requirements.

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Ultra-low-temperature homoepitaxial growth of Sb-doped silicon

Cited by 20 publications

References 29 publications

Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

Advanced broadband imager for EUV and FUV studies with exquisite precision

A system and methodologies for absolute quantum efficiency measurements from the vacuum ultraviolet through the near infrared

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